# MI3461-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

MI3461-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source-drain diode current is rated 1.39 A at TC = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 60 V with continuous drain current of 4.0 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 4 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.4 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.1 | A | TA = 25 °C (notes b, c) | 1 |
| Continuous Drain Current | ID |  |  | 2.5 | A | TA = 70 °C (notes b, c) | 1 |
| Pulsed Drain Current | IDM |  |  | 12 | A |  | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 1.39 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 0.91 | A | TA = 25 °C (notes b, c) | 1 |
| Avalanche Current | IAS |  |  | 6 | A | L = 0.1 mH | 1 |
| Single-Pulse Avalanche Energy | EAS |  |  | 1.8 | mJ |  | 1 |
| Maximum Power Dissipation | PD |  |  | 1.66 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.06 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.09 | W | TA = 25 °C (notes b, c) | 1 |
| Maximum Power Dissipation | PD |  |  | 0.7 | W | TA = 70 °C (notes b, c) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (5 s) | RthJA |  | 90 | 115 | °C/W | t ≤ 5 s (notes b, d) | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA |  |  | 120 | °C/W | Steady state (note d) | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 60 | 75 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VDS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 8 |  |  | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.086 | Ω | VGS = 4.5 V, ID = 1.7 A | 2 |
| Gate Resistance | Rg | 0.6 | 2.2 | 5.1 | Ω | f = 1 MHz | 2 |
| Continuous Source-Drain Diode Current (TC = 25 °C) | IS |  |  | 2.19 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | 7 | A |  | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 1.5 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 15 | 23 | ns | IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 10 | 15 | nC | IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Turn-On Delay Time (VGEN = 4.5 V) | td(on) |  | 15 | 23 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 |
| Rise Time (VGEN = 10 V) | tr |  | 10 | 15 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 |
| Rise Time (VGEN = 4.5 V) | tr |  | 16 | 24 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 |
| Turn-Off Delay Time (VGEN = 10 V) | td(off) |  | 10 | 15 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 |
| Turn-Off Delay Time (VGEN = 4.5 V) | td(off) |  | 11 | 17 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 |
| Fall Time (VGEN = 10 V) | tf |  | 7 | 10.5 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 |
| Fall Time (VGEN = 4.5 V) | tf |  | 11 | 17 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 |
| Reverse Recovery Fall Time | ta |  | 12 |  | ns |  | 2 |
| Reverse Recovery Rise Time | tb |  | 3 |  | ns |  | 2 |
| Temperature Coefficient of Drain-Source Breakdown Voltage | ΔVDS/TJ |  | 55 |  | mV/°C | ID = 250 µA | 2 |
| Temperature Coefficient of Gate-Source Threshold Voltage | ΔVGS(th)/TJ |  | -5 |  |  |  | 2 |
| Forward Transconductance | gfs |  | 5 |  | S | VDS = 15 V, ID = 1.9 A | 2 |
| Reverse Transfer Capacitance | Crss |  | 13 |  | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 2 |

## CAD (KiCad official)

- Symbol: `MI3461-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `mi3461-vb-etched.step` / `mi3461-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mi3461-vb.step` / `mi3461-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603382071285071872) (9 pp, sha256 `9e5a345008dc702a`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mi3461-vb-datasheet.pdf)