component
MEM2310M3G
Public Made by Adomby adom
MICRONE MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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mem2310m3g: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
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16d ago
MEM2310M3G
MICRONE · MOSFETs · SOT-23-3L
MEM2310M3G from MICRONE, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of 0.7 V min, 0.88 V typ and 1.4 V max at ID=250uA. |
| 2 | S | passive | Source; maximum body-diode continuous current is 2.5 A and the drain-source breakdown voltage is 30 V min. |
| 3 | D | passive | Drain; drain-source voltage rated 30 V, continuous drain current 5.8 A at TA=25℃ and pulsed drain current 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MICRONE |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 1 | ||
| Drain Current | ID | 5.8 | A | TA=25℃ | 1 | ||
| Drain Current | ID | 4.9 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Total Power Dissipation | Pd | 1.4 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | Pd | 1 | W | TA=70℃ | 1 | ||
| Operating Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -65 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 65 | 90 | ℃/W | t≤10s | 2 | |
| Thermal Resistance, Junction-to-Ambient Steady-State | RθJA | 85 | 125 | ℃/W | Steady-State | 2 | |
| Thermal Resistance, Junction-to-Lead Steady-State | RθJL | 43 | 60 | ℃/W | Steady-State | 2 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | 35 | V | VGS=0V, ID=250uA | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.88 | 1.4 | V | VDS= VGS, ID=250uA | 2 |
| Gate-Body Leakage | IGSS | 0.5 | 100 | nA | VDS=0V,VGS=12V | 2 | |
| Gate-Body Leakage | IGSS | -0.2 | -100 | nA | VDS=0V,VGS=-12V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1000 | nA | VDS=24V VGS=0V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 30 | mΩ | VGS=10V, ID=5.8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 28 | 33 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 37 | 50 | mΩ | VGS=2.5V, ID=4A | 2 | |
| Forward Transconductance | gFS | 10 | 15 | S | VDS = 5 V, ID = 5A | 2 | |
| Maximum Body-Diode Continuous Current | Is | 2.5 | A | 2 | |||
| Source-drain (diode forward) voltage | VSD | 0.72 | 1 | V | VGS=0V,IS=1A | 2 | |
| Input Capacitance | Ciss | 823 | 1030 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | |
| Gate resistance | Rg | 1.2 | 3.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Turn-On Delay Time | td(on) | 7 | 14 | ns | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 2 | |
| Rise Time | tr | 15 | 30 | ns | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 38 | 76 | ns | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 2 | |
| Fall-Time | tf | 3 | 6 | ns | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 2 | |
| Total Gate Charge | Qg | 11 | 14.3 | nc | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 2 | |
| Gate-Source Charge | Qgs | 1.6 | 2.08 | nc | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 2 | |
| Gate-Drain Charge | Qgd | 2.8 | 3.64 | nc | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 2 | |
| Output Capacitance | Coss | 99 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 77 | pF | 2 |
CAD (KiCad official)
- Symbol:
MEM2310M3G - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
mem2310m3g-etched.step/mem2310m3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mem2310m3g.step/mem2310m3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MICRONE datasheet (7 pp, sha256
4eac3e8efb4f985f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MEM2310M3G
**MICRONE** · MOSFETs · SOT-23-3L
MEM2310M3G from MICRONE, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of 0.7 V min, 0.88 V typ and 1.4 V max at ID=250uA. |
| 2 | S | passive | Source; maximum body-diode continuous current is 2.5 A and the drain-source breakdown voltage is 30 V min. |
| 3 | D | passive | Drain; drain-source voltage rated 30 V, continuous drain current 5.8 A at TA=25℃ and pulsed drain current 30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MICRONE |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGSS | -12 | | 12 | V | | 1 |
| Drain Current | ID | | | 5.8 | A | TA=25℃ | 1 |
| Drain Current | ID | | | 4.9 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 30 | A | | 1 |
| Total Power Dissipation | Pd | | | 1.4 | W | TA=25℃ | 1 |
| Total Power Dissipation | Pd | | | 1 | W | TA=70℃ | 1 |
| Operating Junction Temperature | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature Range | Tstg | -65 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 65 | 90 | ℃/W | t≤10s | 2 |
| Thermal Resistance, Junction-to-Ambient Steady-State | RθJA | | 85 | 125 | ℃/W | Steady-State | 2 |
| Thermal Resistance, Junction-to-Lead Steady-State | RθJL | | 43 | 60 | ℃/W | Steady-State | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | 35 | | V | VGS=0V, ID=250uA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.88 | 1.4 | V | VDS= VGS, ID=250uA | 2 |
| Gate-Body Leakage | IGSS | | 0.5 | 100 | nA | VDS=0V,VGS=12V | 2 |
| Gate-Body Leakage | IGSS | | -0.2 | -100 | nA | VDS=0V,VGS=-12V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1000 | nA | VDS=24V VGS=0V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 25 | 30 | mΩ | VGS=10V, ID=5.8A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 28 | 33 | mΩ | VGS=4.5V, ID=5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 37 | 50 | mΩ | VGS=2.5V, ID=4A | 2 |
| Forward Transconductance | gFS | | 10 | 15 | S | VDS = 5 V, ID = 5A | 2 |
| Maximum Body-Diode Continuous Current | Is | | | 2.5 | A | | 2 |
| Source-drain (diode forward) voltage | VSD | | 0.72 | 1 | V | VGS=0V,IS=1A | 2 |
| Input Capacitance | Ciss | | 823 | 1030 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate resistance | Rg | | 1.2 | 3.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) | | 7 | 14 | ns | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 2 |
| Rise Time | tr | | 15 | 30 | ns | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 38 | 76 | ns | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 2 |
| Fall-Time | tf | | 3 | 6 | ns | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 2 |
| Total Gate Charge | Qg | | 11 | 14.3 | nc | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 2 |
| Gate-Source Charge | Qgs | | 1.6 | 2.08 | nc | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 2 |
| Gate-Drain Charge | Qgd | | 2.8 | 3.64 | nc | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 2 |
| Output Capacitance | Coss | | 99 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 77 | | pF | | 2 |
## CAD (KiCad official)
- Symbol: `MEM2310M3G`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `mem2310m3g-etched.step` / `mem2310m3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mem2310m3g.step` / `mem2310m3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MICRONE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904720034877440) (7 pp, sha256 `4eac3e8efb4f985f`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mem2310m3g-datasheet.pdf)