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MEM2302XG

Public Made by Adom

by adom

MICRONE MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray mem2302xg: specified limits as data (metadata.characteristics, 29 rows from the datasheet) 9f160af 24d ago

MEM2302XG

MICRONE · MOSFETs · SOT-23

MEM2302XG from MICRONE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±8 V absolute maximum, with a threshold of 0.51 V min to 0.85 V max at ID=250uA.
2 S passive Source; the source-drain diode forward voltage is 1 V max at IS=1.25A, and continuous drain current is 3 A at TA=25℃.
3 D passive Drain; drain-source voltage is rated at 20 V maximum, with continuous drain current of 3 A at TA=25℃ and pulsed drain current of 15 A.

Key specifications

Parameter Value
Manufacturer MICRONE
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 1
Gate-Source Voltage VGSS -8 8 V 1
Drain Current ID 3 A TA=25℃ 1
Drain Current ID 2 A TA=70℃ 1
Pulsed Drain Current IDM 15 A 1
Total Power Dissipation Pd 0.7 W TA=25℃ 1
Total Power Dissipation Pd 0.46 W TA=70℃ 1
Operating Junction Temperature Tj 150 ℃ 1
Storage Temperature Range Tstg -65 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 140 ℃/W 2
Drain-Source Breakdown Voltage V(BR)DSS 20 23 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(th) 0.51 0.53 0.85 V VDS= VGS, ID=250uA 2
Gate-Body Leakage IGSS 1.6 100 nA VDS=0V, VGS=8V 2
Gate-Body Leakage IGSS -0.2 -100 nA VDS=0V, VGS=-8V 2
Zero Gate Voltage Drain Current IDSS 6.3 1000 nA VDS=20V, VGS=0V 2
Static Drain-Source On-Resistance RDS(ON) 29 50 mΩ VGS=4.5V, ID=3A 2
Static Drain-Source On-Resistance RDS(ON) 36 65 mΩ VGS=2.5V, ID=2A 2
Source-Drain (Diode Forward) Voltage VSD 0.4 0.7 1 V VGS=0V, IS=1.25A 2
Turn-On Delay Time td(on) 8 15 ns VDD=15 V, RL=2.8Ω, ID=3.6A, VGEN=4.5V, Rg=36Ω 2
Rise Time tr 50 80 ns VDD=15 V, RL=2.8Ω, ID=3.6A, VGEN=4.5V, Rg=36Ω 2
Turn-Off Delay Time td(off) 15 60 ns VDD=15 V, RL=2.8Ω, ID=3.6A, VGEN=4.5V, Rg=36Ω 2
Fall Time tf 10 25 ns VDD=15 V, RL=2.8Ω, ID=3.6A, VGEN=4.5V, Rg=36Ω 2
Total Gate Charge Qg 4 10 nC VDS=10V, VGS=4.5V, ID=3.6A 2
Forward Transconductance gFS 8 S VDS=5V, ID=3.6A 2
Input Capacitance Ciss 300 pF VDS=10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 120 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 80 pF VDS=10V, VGS=0V, f=1MHz 2
Gate-Source Charge Qgs 0.65 nc VDS=10V, VGS=4.5V, ID=3.6A 2
Gate-Drain Charge Qgd 1.5 nc VDS=10V, VGS=4.5V, ID=3.6A 2

CAD (KiCad official)

  • Symbol: MEM2302XG
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mem2302xg-etched.step / mem2302xg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mem2302xg.step / mem2302xg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MICRONE datasheet (6 pp, sha256 9f2963ab3422bbea, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF