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Generated by kicad-footprint-generator · KiCad file format 20260206
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mem2301xg-hero.glb mem2301xg: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
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page.json mem2301xg: specified limits as data (metadata.characteristics, 22 rows from the datasheet) · Ray 23d ago
README.md mem2301xg: specified limits as data (metadata.characteristics, 22 rows from the datasheet) · Ray 23d ago

MEM2301XG

MICRONE · MOSFETs · SOT-23

MEM2301XG from MICRONE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±8 V, threshold VGS(th) -0.4 V min to -1 V max at ID=-250μA.
2 S passive Source of the P-channel MOSFET; continuous drain current -2.8 A at TA=25℃, body diode forward voltage max -1.2 V at IS=-1A.
3 D passive Drain; drain-source voltage rated -20 V, continuous current -2.8 A at TA=25℃ and pulsed -10 A, RDS(ON) 93 mΩ typ at VGS=-4.5 V.

Key specifications

Parameter Value
Manufacturer MICRONE
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -20 -23 V VGS=0V, ID=-250μA 2
Gate Threshold Voltage VGS(th) -0.4 0.58 -1 V VDS= VGS, ID=-250μA 2
Gate-Body Leakage (positive VGS) IGSS 0.2 100 nA VDS=0V, VGS=8V 2
Gate-Body Leakage (negative VGS) IGSS -0.2 -100 nA VDS=0V, VGS=-8V 2
Zero Gate Voltage Drain Current IDSS -1.5 -100 nA VDS=-16V, VGS=0V 2
Static Drain-Source On-Resistance RDS(ON)1 93 110 mΩ VGS=-4.5V, ID=-2.8A 2
Static Drain-Source On-Resistance RDS(ON)2 113 140 mΩ VGS=-2.5V, ID=-2A 2
Turn-On Delay Time td(on) 5 25 ns VDD=-6V, ID=-1A, VGEN=-4.5V, Rg=6Ω 2
Rise Time tr 30 60 ns VDD=-6V, ID=-1A, VGEN=-4.5V, Rg=6Ω 2
Turn-Off Delay Time td(off) 25 60 ns VDD=-6V, ID=-1A, VGEN=-4.5V, Rg=6Ω 2
Fall Time tf 10 60 ns VDD=-6V, ID=-1A, VGEN=-4.5V, Rg=6Ω 2
Total Gate Charge Qg 4 10 nc VDS=-6V, VGS=-4.5V, ID=-2.8A 2
Drain-Source Voltage VDSS -20 V 1
Gate-Source Voltage VGSS -8 8 V 1
Continuous Drain Current ID -2.8 A TA=25℃ 1
Continuous Drain Current ID -1.8 A TA=70℃ 1
Pulsed Drain Current IDM -10 A 1
Total Power Dissipation PD 0.7 W TA=25℃ 1
Total Power Dissipation PD 0.45 W TA=70℃ 1
Operating Temperature Range TOpr 150 ℃ 1
Storage Temperature Range Tstg -65 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 145 ℃/W Surface mounted on FR4 board, t ≤ 5 sec 2

CAD (KiCad official)

  • Symbol: MEM2301XG
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mem2301xg-etched.step / mem2301xg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mem2301xg.step / mem2301xg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MICRONE datasheet (6 pp, sha256 57b1d6ae3394315a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF