component
MEE4294-G
Public Made by Adomby adom
MATSUKI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MEE4294-G
MATSUKI · MOSFETs · SOP-8
MEE4294-G from MATSUKI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain terminal, tied with pins 6, 7 and 8, with a drain-source voltage of up to 100 V. |
| 6 | D | passive | Drain terminal, tied with pins 5, 7 and 8, with a drain-source voltage of up to 100 V. |
| 7 | D | passive | Drain terminal, tied with pins 5, 6 and 8, with a drain-source voltage of up to 100 V. |
| 8 | D | passive | Drain terminal, tied with pins 5, 6 and 7, with a drain-source voltage of up to 100 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250μA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 10 | 12 | mΩ | VGS=10V, ID=11.5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 13.5 | 15.5 | mΩ | VGS=4.5V, ID=9.5A | 2 | |
| Diode Forward Voltage | VSD | 0.6 | 1 | V | IS=1A, VGS=0V | 2 | |
| Drain-Source Voltage | VDSS | 100 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | 11.3 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 9 | A | TC=70℃ | 1 | ||
| Single Pulse Avalanche Current | IAS | 20 | A | L=0.1mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | L=0.1mH | 1 | ||
| Pulsed Drain Current | IDM | 45 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.8 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.8 | W | TC=70℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 45 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 | ||
| Input Capacitance | Ciss | 2071 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 704 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 28 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
MEE4294-G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
mee4294-g-etched.step/mee4294-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mee4294-g.step/mee4294-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (3 pp, sha256
7d1762033dd6b0a6, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MEE4294-G
**MATSUKI** · MOSFETs · SOP-8
MEE4294-G from MATSUKI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain terminal, tied with pins 6, 7 and 8, with a drain-source voltage of up to 100 V. |
| 6 | D | passive | Drain terminal, tied with pins 5, 7 and 8, with a drain-source voltage of up to 100 V. |
| 7 | D | passive | Drain terminal, tied with pins 5, 6 and 8, with a drain-source voltage of up to 100 V. |
| 8 | D | passive | Drain terminal, tied with pins 5, 6 and 7, with a drain-source voltage of up to 100 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS=VGS, ID=250μA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V, VGS=0V | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 10 | 12 | mΩ | VGS=10V, ID=11.5A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 13.5 | 15.5 | mΩ | VGS=4.5V, ID=9.5A | 2 |
| Diode Forward Voltage | VSD | | 0.6 | 1 | V | IS=1A, VGS=0V | 2 |
| Drain-Source Voltage | VDSS | | | 100 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 11.3 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 9 | A | TC=70℃ | 1 |
| Single Pulse Avalanche Current | IAS | | | 20 | A | L=0.1mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 20 | mJ | L=0.1mH | 1 |
| Pulsed Drain Current | IDM | | | 45 | A | | 1 |
| Maximum Power Dissipation | PD | | | 2.8 | W | TC=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 1.8 | W | TC=70℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance-Junction to Ambient | RθJA | | | 45 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 |
| Input Capacitance | Ciss | | 2071 | | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 704 | | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 28 | | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 |
## CAD (KiCad official)
- Symbol: `MEE4294-G`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `mee4294-g-etched.step` / `mee4294-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mee4294-g.step` / `mee4294-g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MATSUKI datasheet](docs/mee4294-g-datasheet.pdf) (3 pp, sha256 `7d1762033dd6b0a6`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mee4294-g-datasheet.pdf)