# MEE3710T

**MATSUKI** · MOSFETs · TO-220

MEE3710T from MATSUKI, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 2 to 4 V at ID=250μA. |
| 2 | D | passive | Drain; 100 V drain-source rating, 56 A continuous at TC=25℃ and 225 A pulsed, also connected to the tab. |
| 3 | S | passive | Source; connects to the body diode anode and the return for the drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 56 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 45 | A | TC=70℃ | 1 |
| Single pulse Avalanche Current | IAS |  |  | 21 | A | L=0.5mH, TC=25℃ | 1 |
| Single pulse Avalanche Energy | EAS |  |  | 110 | mJ | L=0.5mH, TC=25℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 225 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 155 | W | TC=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 100 | W | TC=70℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance-Junction to Case | RθJC |  |  | 0.8 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V, ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 19 | 23 | mΩ | VGS=10V, ID= 28A | 2 |
| Diode Forward Voltage | VSD |  | 0.9 | 1.2 | V | IS=28A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `MEE3710T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `mee3710t-etched.step` / `mee3710t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mee3710t.step` / `mee3710t.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MATSUKI datasheet](docs/mee3710t-datasheet.pdf) (5 pp, sha256 `c11d0cde31f8300b`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mee3710t-datasheet.pdf)