component
ME9435A
Public Made by Adomby adom
MATSUKI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ME9435A
MATSUKI · MOSFETs · SOP-8
ME9435A from MATSUKI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS max -30 V, continuous drain current -6.3 A at TA=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS max ±20 V, threshold -1.0 to -3.0 V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS max -30 V, pulsed drain current -25 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -6.3 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -25 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA=70℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 50 | ℃/W | *The device mounted on 1in2 FR4 board with 2 oz copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250μA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24 VGS=0V | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 31 | 40 | mΩ | VGS=-10V, ID= -5.3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 40 | 60 | mΩ | VGS=-4.5V, ID= -4.2A | 2 | |
| Input capacitance | Ciss | 840 | 960 | pF | VDS=-15V, VGS=0V, f=1.0MHz | 2 | |
| Total Gate Charge | Qg | 21 | 25 | nC | VDS=-15V, VGS=-10V, ID=-5.3A | 2 | |
| Turn-On Delay Time | td(on) | 32 | 40 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | 2 | |
| Turn-On Rise Time | tr | 13 | 16 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | 2 | |
| Turn-Off Delay Time | td(off) | 58 | 75 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | 2 | |
| Turn-Off Fall Time | tf | 6 | 9 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | 2 |
CAD (KiCad official)
- Symbol:
ME9435A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
me9435a-etched.step/me9435a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me9435a.step/me9435a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
86fd8e6c9f5ec546, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ME9435A
**MATSUKI** · MOSFETs · SOP-8
ME9435A from MATSUKI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS max -30 V, continuous drain current -6.3 A at TA=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS max ±20 V, threshold -1.0 to -3.0 V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS max -30 V, pulsed drain current -25 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -6.3 | | | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | -5 | | | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | -25 | | | A | | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TA=70℃ | 1 |
| Operating Junction Temperature | TJ | -55 | | 150 | ℃ | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 50 | ℃/W | *The device mounted on 1in2 FR4 board with 2 oz copper | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250μA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250μA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | -1 | | | μA | VDS=-24 VGS=0V | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 31 | 40 | mΩ | VGS=-10V, ID= -5.3A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 40 | 60 | mΩ | VGS=-4.5V, ID= -4.2A | 2 |
| Input capacitance | Ciss | | 840 | 960 | pF | VDS=-15V, VGS=0V, f=1.0MHz | 2 |
| Total Gate Charge | Qg | | 21 | 25 | nC | VDS=-15V, VGS=-10V, ID=-5.3A | 2 |
| Turn-On Delay Time | td(on) | | 32 | 40 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | 2 |
| Turn-On Rise Time | tr | | 13 | 16 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | 2 |
| Turn-Off Delay Time | td(off) | | 58 | 75 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | 2 |
| Turn-Off Fall Time | tf | | 6 | 9 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | 2 |
## CAD (KiCad official)
- Symbol: `ME9435A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `me9435a-etched.step` / `me9435a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me9435a.step` / `me9435a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MATSUKI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918401469190144) (5 pp, sha256 `86fd8e6c9f5ec546`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/me9435a-datasheet.pdf)