# ME9435

**MATSUKI** · MOSFETs · SOP-8

ME9435 from MATSUKI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied to pins 2 and 3; drain-source voltage rated -30 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 3; continuous drain current -5.1 A at TA=25℃. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 2; pulsed drain current up to -20 A. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit ±20 V, threshold -1 to -3 V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to pins 6, 7 and 8; RDS(ON) 60 mΩ max at VGS=-10V. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8; RDS(ON) 90 mΩ max at VGS=-4.5V. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8; drain-source breakdown voltage -30 V min. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7; zero gate voltage drain current -1 μA max at VDS=-30V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V | TA=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA=25℃ unless otherwise noted | 1 |
| Continuous Drain Current | ID |  |  | -5.1 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID |  |  | -4.1 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM |  |  | -20 | A | TA=25℃ unless otherwise noted | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TA=70℃ | 1 |
| Operating Junction Temperature | TJ | -55 |  | 150 | ℃ |  | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 50 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0, ID=-250μA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -3 | V | VDS=VGS, ID=-250μA | 2 |
| Gate Body Leakage | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-30V, VGS=0V | 2 |
| Drain-Source On-Resistance | RDS(ON) |  | 50 | 60 | mΩ | VGS=-10V, ID= -5.3A | 2 |
| Drain-Source On-Resistance | RDS(ON) |  | 70 | 90 | mΩ | VGS=-4.5V, ID= -4.2A | 2 |
| Diode Forward Voltage | VSD |  | -0.9 | -1.2 | V | IS=-5.3A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `ME9435`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `me9435-etched.step` / `me9435-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me9435.step` / `me9435.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MATSUKI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916951234596864) (5 pp, sha256 `c66408c25fd93d0e`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/me9435-datasheet.pdf)