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ME75N80CD-G-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ME75N80CD-G-VB

VBsemi Elec · MOSFETs · TO-252

ME75N80CD-G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold of 2.5 to 4.0 V at ID = 250 µA.
2 D passive Drain (also the TO-252 tab); drain-source voltage rating is 80 V, with continuous drain current of 75 A at TC = 25 °C.
3 S passive Source; continuous source-drain diode current is 75 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 75 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 28.6 A TA = 25 °C, notes b, c 1
Continuous Drain Current ID 24.9 A TA = 70 °C, notes b, c 1
Pulsed Drain Current IDM 150 A t = 100 μs 1
Continuous Source-Drain Diode Current IS 75 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 4.5 A TA = 25 °C, notes b, c 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 45 mJ 1
Maximum Power Dissipation PD 62.5 W TC = 25 °C 1
Maximum Power Dissipation PD 40 W TC = 70 °C 1
Maximum Power Dissipation PD 5 W TA = 25 °C, notes b, c 1
Maximum Power Dissipation PD 3.2 W TA = 70 °C, notes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C notes d, e 1
Maximum Junction-to-Ambient RthJA 20 25 °C/W t ≤ 10 s, notes b, f 1
Maximum Junction-to-Ambient RthJA 70 °C/W steady state, note f 1
Maximum Junction-to-Case (Drain) RthJC 1.5 2 °C/W steady state 1
Drain-Source Breakdown Voltage VDS 80 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2.5 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 80 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 80 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 30 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.005 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.007 Ω VGS = 6 V, ID = 15 A 2
Drain-Source On-State Resistance RDS(on) 0.0087 Ω VGS = 5.0 V, ID = 10 A 2
Gate Resistance Rg 0.5 1.3 2 Ω f = 1 MHz 2
Total Gate Charge Qg 35.5 54 nC VDS = 40 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge Qg 22 33 nC VDS = 40 V, VGS = 6 V, ID = 10 A 2
Total Gate Charge Qg 17.1 26 nC VDS = 40 V, VGS = 4.5 V, ID = 10 A 2
Output Charge Qoss 57 86 nC VDS = 40 V, VGS = 0 V 2
Turn-On Delay Time td(on) 12 24 ns VDD = 40 V, RL = 4 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 8 16 ns VDD = 40 V, RL = 4 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 32 64 ns VDD = 40 V, RL = 4 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = 40 V, RL = 4 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 14 28 ns VDD = 40 V, RL = 4 Ω, ID 10 A, VGEN = 6.0 V, Rg = 1 Ω 2
Rise Time tr 11 22 ns VDD = 40 V, RL = 4 Ω, ID 10 A, VGEN = 6.0 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 30 60 ns VDD = 40 V, RL = 4 Ω, ID 10 A, VGEN = 6.0 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 40 V, RL = 4 Ω, ID 10 A, VGEN = 6.0 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 75 A TC = 25 °C 2
Pulse Diode Forward Current ISM 150 A t = 100 μs 2
Body Diode Voltage VSD 0.76 1.1 V IS = 5 A 2
Body Diode Reverse Recovery Qrr Qrr 36 70 nC IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body Diode Reverse Recovery Time trr 38 ns IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Drain-Source Breakdown Voltage Temperature Coefficient VDS/TJ 37 mV/°C ID = 250 μA 2
Gate-Source Threshold Voltage Temperature Coefficient VGS(th)/TJ -6.1 mV/°C 2
Forward Transconductance gfs 60 S VDS = 10 V, ID = 20 A 2
Input Capacitance Ciss 1855 pF VDS = 40 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 950 pF VDS = 40 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 76 pF VDS = 40 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 5.3 nC 2
Gate-Drain Charge Qgd 7.3 nC 2
Reverse Recovery Fall Time ta 19 ns 2
Reverse Recovery Rise Time tb 19 ns 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper d. The TO-220 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cann 1

CAD (KiCad official)

  • Symbol: ME75N80CD-G-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: me75n80cd-g-vb-etched.step / me75n80cd-g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); me75n80cd-g-vb.step / me75n80cd-g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 53b31c4a44d659ae, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF