component
ME75N03
Public Made by Adomby adom
MATSUKI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
ME75N03
MATSUKI · MOSFETs · TO-252
ME75N03 from MATSUKI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±20 V and threshold VGS(th) of 1 V min to 3 V max at ID=250μA. |
| 2 | D | passive | Drain (center pin, also the tab); absolute maximum VDS of 30 V and continuous ID of 71 A at TC=25℃. |
| 3 | S | passive | Source; connects to the current return and the body diode anode, with continuous ID of 71 A at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 71 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 57 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 284 | A | 1 | |||
| Maximum Power Dissipation | PD | 42 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 27 | W | TC=70℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance-Junction to Case | RθJC | 3 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper (footnote *) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250μA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 4.3 | 5.2 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 6 | 8 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | ISD=25A, VGS=0V | 2 | |
| Total Gate Charge | Qg | 56 | nC | VDD=15V, VGS=10V, ID=20A | 2 | ||
| Total Gate Charge | Qg | 28 | nC | VDD=15V, VGS=4.5V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 9 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 13 | nC | 2 | |||
| Gate Resistance | Rg | 1.7 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Input Capacitance | Ciss | 2580 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 393 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 128 | pF | 2 | |||
| Turn-On Delay Time | td(on) | 23 | ns | VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=3Ω | 2 | ||
| Turn-On Rise Time | tr | 17 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 76 | ns | 2 | |||
| Turn-Off Fall Time | tf | 12 | ns | 2 |
CAD (KiCad official)
- Symbol:
ME75N03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
me75n03-etched.step/me75n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me75n03.step/me75n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
d65746c7166ee0f8, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ME75N03
**MATSUKI** · MOSFETs · TO-252
ME75N03 from MATSUKI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±20 V and threshold VGS(th) of 1 V min to 3 V max at ID=250μA. |
| 2 | D | passive | Drain (center pin, also the tab); absolute maximum VDS of 30 V and continuous ID of 71 A at TC=25℃. |
| 3 | S | passive | Source; connects to the current return and the body diode anode, with continuous ID of 71 A at TC=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 71 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 57 | A | TC=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 284 | A | | 1 |
| Maximum Power Dissipation | PD | | | 42 | W | TC=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 27 | W | TC=70℃ | 1 |
| Operating Junction Temperature | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance-Junction to Case | RθJC | | | 3 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper (footnote *) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS=VGS, ID=250μA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 |
| Drain-Source On-Resistance | RDS(ON) | | 4.3 | 5.2 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-Resistance | RDS(ON) | | 6 | 8 | mΩ | VGS=4.5V, ID=20A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | ISD=25A, VGS=0V | 2 |
| Total Gate Charge | Qg | | 56 | | nC | VDD=15V, VGS=10V, ID=20A | 2 |
| Total Gate Charge | Qg | | 28 | | nC | VDD=15V, VGS=4.5V, ID=20A | 2 |
| Gate-Source Charge | Qgs | | 9 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 13 | | nC | | 2 |
| Gate Resistance | Rg | | 1.7 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Input Capacitance | Ciss | | 2580 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 393 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 128 | | pF | | 2 |
| Turn-On Delay Time | td(on) | | 23 | | ns | VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=3Ω | 2 |
| Turn-On Rise Time | tr | | 17 | | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 76 | | ns | | 2 |
| Turn-Off Fall Time | tf | | 12 | | ns | | 2 |
## CAD (KiCad official)
- Symbol: `ME75N03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `me75n03-etched.step` / `me75n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me75n03.step` / `me75n03.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MATSUKI datasheet](docs/me75n03-datasheet.pdf) (5 pp, sha256 `d65746c7166ee0f8`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/me75n03-datasheet.pdf)