component
ME7170
Public Made by Adomby adom
MATSUKI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ME7170
MATSUKI · MOSFETs · DFN-8(5x6)
ME7170 from MATSUKI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together. |
| 4 | G | input | Gate terminal with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V. |
| 6 | D | passive | Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V. |
| 7 | D | passive | Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V. |
| 8 | D | passive | Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.2 | V | VDS=VGS, ID=250μA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 2.4 | 2.6 | mΩ | VGS=10V, ID=25A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 3.3 | 3.9 | mΩ | VGS=4.5V, ID=19A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS=25A, VGS=0V | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | 110 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 90 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 450 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 56 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 36 | W | TA=70℃ | 1 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 2.2 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 | ||
| Total Gate Charge | Qg | 86 | nC | VDS=15V, VGS=10V, ID=20A | 2 | ||
| Total Gate Charge | Qg | 39 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 19 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 12 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 5406 | pF | VDS=15V, VGS=0V, F=1MHz | 2 | ||
| Output Capacitance | Coss | 487 | pF | VDS=15V, VGS=0V, F=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 418 | pF | VDS=15V, VGS=0V, F=1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 27 | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A | 2 | ||
| Turn-On Rise Time | tr | 51 | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A | 2 | ||
| Turn-Off Delay Time | td(off) | 152 | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A | 2 | ||
| Turn-Off Fall Time | tf | 54 | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A | 2 |
CAD (KiCad official)
- Symbol:
ME7170 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
me7170-etched.step/me7170-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me7170.step/me7170.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
3a2836f518c0b266, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ME7170
**MATSUKI** · MOSFETs · DFN-8(5x6)
ME7170 from MATSUKI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together. |
| 4 | G | input | Gate terminal with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V. |
| 6 | D | passive | Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V. |
| 7 | D | passive | Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V. |
| 8 | D | passive | Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | VGS=0V, ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 2.4 | 2.6 | mΩ | VGS=10V, ID=25A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 3.3 | 3.9 | mΩ | VGS=4.5V, ID=19A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS=25A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 110 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 90 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 450 | A | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 56 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 36 | W | TA=70℃ | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction to Case | RθJC | | | 2.2 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 |
| Total Gate Charge | Qg | | 86 | | nC | VDS=15V, VGS=10V, ID=20A | 2 |
| Total Gate Charge | Qg | | 39 | | nC | VDS=15V, VGS=4.5V, ID=20A | 2 |
| Gate-Source Charge | Qgs | | 19 | | nC | VDS=15V, VGS=4.5V, ID=20A | 2 |
| Gate-Drain Charge | Qgd | | 12 | | nC | VDS=15V, VGS=4.5V, ID=20A | 2 |
| Input Capacitance | Ciss | | 5406 | | pF | VDS=15V, VGS=0V, F=1MHz | 2 |
| Output Capacitance | Coss | | 487 | | pF | VDS=15V, VGS=0V, F=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 418 | | pF | VDS=15V, VGS=0V, F=1MHz | 2 |
| Turn-On Delay Time | td(on) | | 27 | | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A | 2 |
| Turn-On Rise Time | tr | | 51 | | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A | 2 |
| Turn-Off Delay Time | td(off) | | 152 | | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A | 2 |
| Turn-Off Fall Time | tf | | 54 | | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A | 2 |
## CAD (KiCad official)
- Symbol: `ME7170`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `me7170-etched.step` / `me7170-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me7170.step` / `me7170.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MATSUKI datasheet](docs/me7170-datasheet.pdf) (5 pp, sha256 `3a2836f518c0b266`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/me7170-datasheet.pdf)