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ME60P06T-VB

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ME60P06T-VB

VBsemi Elec · MOSFETs · TO-220AB

ME60P06T-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of -1 to -3 V.
2 D passive Drain of the P-channel MOSFET, rated for VDS of -60 V and continuous drain current of -50 A at TC = 25 °C.
3 S passive Source of the P-channel MOSFET, with a continuous source-drain diode current of 69 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V ± 20 1
Continuous Drain Current ID -50 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -46 A TC = 70 °C, TJ = 150 °C 1
Continuous Drain Current ID -39 A TA = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -34 A TA = 70 °C, TJ = 150 °C 1
Pulsed Drain Current IDM -200 A 1
Avalanche Current Pulse IAS -45 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 101 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 69 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 20 A TA = 25 °C, surface mounted on 1" x 1" FR4 1
Maximum Power Dissipation PD 104.2 W TC = 25 °C 1
Maximum Power Dissipation PD 66.7 W TC = 70 °C 1
Maximum Power Dissipation PD 3.1 W TA = 25 °C, surface mounted on 1" x 1" FR4 1
Maximum Power Dissipation PD 2 W TA = 70 °C, surface mounted on 1" x 1" FR4 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 33 40 °C/W Steady State, surface mounted on 1" x 1" FR4 1
Junction-to-Case Thermal Resistance RthJC 0.98 1.2 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -120 A VDS = - 5 V, VGS = - 10 V 2
Total Gate Charge Qg 76 115 nC VDS = - 30 V, VGS = - 10 V, ID = - 55 A 2
Total Gate Charge Qg 38 60 nC VDS = - 30 V, VGS = - 4.5 V, ID = - 55 A 2
Turn-On Delay Time td(on) 10 15 ns ID ≈ - 10 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 7 15 ns ID ≈ - 10 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 110 ns ID ≈ - 10 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 40 60 ns ID ≈ - 10 A, VGEN = - 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -69 A TC = 25 °C 2
Pulse Diode Forward Current ISM -150 A 2
Body Diode Voltage VSD -1 -1.5 V IS = - 30 A 2
Body Diode Reverse Recovery Time trr 45 68 ns IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 59 120 nC IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 19 mΩ VGS = - 10 V, ID = - 30 A 2
Drain-Source On-State Resistance RDS(on) 26 mΩ VGS = - 4.5 V, ID = - 20 A 2
Forward Transconductance gfs 20 S VDS = - 15 V, ID = - 50 A 2
VDS Temperature Coefficient VDS/TJ 68 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -5.2 mV/°C ID = - 250 µA 2
Output Capacitance Coss 390 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 290 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 16 nC VDS = - 30 V, VGS = - 4.5 V, ID = - 55 A 2
Gate-Drain Charge Qgd 19 nC VDS = - 30 V, VGS = - 4.5 V, ID = - 55 A 2
Gate Resistance Rg 5.2 Ω f = 1 MHz 2
Reverse Recovery Fall Time ta 29 ns IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 16 ns IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: ME60P06T-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: me60p06t-vb-etched.step / me60p06t-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); me60p06t-vb.step / me60p06t-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 ed29d9541e62e8b6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF