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ME60N03AS-VB
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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ME60N03AS-VB
VBsemi Elec · MOSFETs · TO-252
ME60N03AS-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±15 V. |
| 2 | D | passive | Drain terminal (connected to the tab), with VDS rated at 20 V and continuous drain current of 100 A (package limited) at TC = 25C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with a continuous source (diode) current of 65 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TA = 25C | 1 | ||
| Gate-Source Voltage | VGS | -15 | 15 | V | TA = 25C | 1 | |
| Continuous Drain Current | ID | 100 | A | TC = 25C, package limited | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC = 100C, package limited | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 65 | A | package limited | 1 | ||
| Maximum Power Dissipation | PD | 71 | W | TC = 25C | 1 | ||
| Maximum Power Dissipation | PD | 8.3 | W | TA = 25C, t <= 10 sec | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 15 | 18 | C/W | t <= 10 sec, 1in x 1in FR4 | 1 | |
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | 50 | C/W | Steady State, 1in x 1in FR4 | 1 | |
| Junction-to-Case Thermal Resistance | RthJC | 1.75 | 2.1 | C/W | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0 V, ID = 250 A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.5 | V | VDS = VGS, ID = 250 A | 2 | |
| Gate-Body Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = 12 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | A | VDS = 20 V, VGS = 0 V, TJ = 125C | 2 | ||
| On-State Drain Current | ID(on) | 100 | A | VDS = 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.0045 | ohm | VGS = 4.5 V, ID = 20 A | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.0055 | ohm | VGS = 4.5 V, ID = 20 A, TJ = 125C | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.006 | ohm | VGS = 2.5 V, ID = 20 A | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS = 5 V, ID = 40 A | 2 | ||
| Total Gate Charge | Qg | 26 | 35 | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 | |
| Gate Resistance | Rg | 1 | 3.7 | ohm | 2 | ||
| Turn-On Delay Time | td(on) | 20 | 35 | ns | VDD = 10 V, RL = 0.25 ohm, ID = 40 A, VGEN = 4.5 V, RG = 2.5 ohm | 2 | |
| Rise Time | tr | 120 | 190 | ns | VDD = 10 V, RL = 0.25 ohm | 2 | |
| Turn-Off Delay Time | td(off) | 45 | 70 | ns | VDD = 10 V, RL = 0.25 ohm, ID = 40 A, VGEN = 4.5 V, RG = 2.5 ohm | 2 | |
| Fall Time | tf | 20 | 35 | ns | VDD = 10 V, RL = 0.25 ohm, ID = 40 A, VGEN = 4.5 V, RG = 2.5 ohm | 2 | |
| Pulsed Current | ISM | 100 | A | TC = 25C | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | 1.5 | V | IF = 100 A, VGS = 0 V | 2 | |
| Source-Drain Reverse Recovery Time | trr | 35 | 70 | ns | IF = 40 A, di/dt = 100 A/s | 2 | |
| Input Capacitance | Ciss | 3660 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 730 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 375 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 5 | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 | ||
| Gate-Drain Charge | Qgd | 7 | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 |
CAD (KiCad official)
- Symbol:
ME60N03AS-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
me60n03as-vb-etched.step/me60n03as-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me60n03as-vb.step/me60n03as-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (6 pp, sha256
ef3e2c3cd2aeed2c, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ME60N03AS-VB
**VBsemi Elec** · MOSFETs · TO-252
ME60N03AS-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±15 V. |
| 2 | D | passive | Drain terminal (connected to the tab), with VDS rated at 20 V and continuous drain current of 100 A (package limited) at TC = 25C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with a continuous source (diode) current of 65 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | TA = 25C | 1 |
| Gate-Source Voltage | VGS | -15 | | 15 | V | TA = 25C | 1 |
| Continuous Drain Current | ID | | | 100 | A | TC = 25C, package limited | 1 |
| Continuous Drain Current | ID | | | 80 | A | TC = 100C, package limited | 1 |
| Pulsed Drain Current | IDM | | | 200 | A | | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 65 | A | package limited | 1 |
| Maximum Power Dissipation | PD | | | 71 | W | TC = 25C | 1 |
| Maximum Power Dissipation | PD | | | 8.3 | W | TA = 25C, t <= 10 sec | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | 15 | 18 | C/W | t <= 10 sec, 1in x 1in FR4 | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | 40 | 50 | C/W | Steady State, 1in x 1in FR4 | 1 |
| Junction-to-Case Thermal Resistance | RthJC | | 1.75 | 2.1 | C/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS = 0 V, ID = 250 A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | | 1.5 | V | VDS = VGS, ID = 250 A | 2 |
| Gate-Body Leakage | IGSS | | | 100 | nA | VDS = 0 V, VGS = 12 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | A | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | A | VDS = 20 V, VGS = 0 V, TJ = 125C | 2 |
| On-State Drain Current | ID(on) | 100 | | | A | VDS = 5 V, VGS = 4.5 V | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.0045 | ohm | VGS = 4.5 V, ID = 20 A | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.0055 | ohm | VGS = 4.5 V, ID = 20 A, TJ = 125C | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.006 | ohm | VGS = 2.5 V, ID = 20 A | 2 |
| Forward Transconductance | gfs | | 20 | | S | VDS = 5 V, ID = 40 A | 2 |
| Total Gate Charge | Qg | | 26 | 35 | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 |
| Gate Resistance | Rg | 1 | | 3.7 | ohm | | 2 |
| Turn-On Delay Time | td(on) | | 20 | 35 | ns | VDD = 10 V, RL = 0.25 ohm, ID = 40 A, VGEN = 4.5 V, RG = 2.5 ohm | 2 |
| Rise Time | tr | | 120 | 190 | ns | VDD = 10 V, RL = 0.25 ohm | 2 |
| Turn-Off Delay Time | td(off) | | 45 | 70 | ns | VDD = 10 V, RL = 0.25 ohm, ID = 40 A, VGEN = 4.5 V, RG = 2.5 ohm | 2 |
| Fall Time | tf | | 20 | 35 | ns | VDD = 10 V, RL = 0.25 ohm, ID = 40 A, VGEN = 4.5 V, RG = 2.5 ohm | 2 |
| Pulsed Current | ISM | | | 100 | A | TC = 25C | 2 |
| Diode Forward Voltage | VSD | | 1.2 | 1.5 | V | IF = 100 A, VGS = 0 V | 2 |
| Source-Drain Reverse Recovery Time | trr | | 35 | 70 | ns | IF = 40 A, di/dt = 100 A/s | 2 |
| Input Capacitance | Ciss | | 3660 | | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 730 | | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 375 | | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 5 | | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 |
| Gate-Drain Charge | Qgd | | 7 | | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 |
## CAD (KiCad official)
- Symbol: `ME60N03AS-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `me60n03as-vb-etched.step` / `me60n03as-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me60n03as-vb.step` / `me60n03as-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/me60n03as-vb-datasheet.pdf) (6 pp, sha256 `ef3e2c3cd2aeed2c`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/me60n03as-vb-datasheet.pdf)