# ME55N06A

**MATSUKI** · MOSFETs · TO-252

ME55N06A from MATSUKI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; pin 1 on the left in the top view, with VGS rated at ±25 V maximum and a gate threshold of 2 V min to 4 V max at ID=250μA. |
| 2 | D | passive | Drain, the center pin, which is also the tab; rated for VDS of 75 V, continuous ID of 64 A at TC=25℃ and pulsed IDM of 256 A. |
| 3 | S | passive | Source; pin 3 on the right in the top view, where the body diode forward voltage is 1.2 V max at IS=25A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 75 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -25 |  | 25 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 64 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 51 | A | TC=70℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 256 | A | TC=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 63 | W | TC=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 40 | W | TC=70℃ | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction to Case | RθJC |  |  | 2 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 75 |  |  | V | VGS=0V, ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=75V, VGS=0V | 2 |
| Drain-Source On-Resistance | RDS(ON) |  | 7.5 | 9.5 | mΩ | VGS=10V, ID=25A | 2 |
| Diode Forward Voltage | VSD |  | 0.85 | 1.2 | V | IS=25A, VGS=0V | 2 |
| Input Capacitance | Ciss |  | 1563 |  | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 363 |  | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 194 |  | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) |  | 51.4 |  | ns | VDD=28V, RL=28Ω, VGS=10V, RG=4.5Ω | 2 |
| Turn-On Rise Time | tr |  | 19.3 |  | ns | VDD=28V, RL=28Ω, VGS=10V, RG=4.5Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 104 |  | ns | VDD=28V, RL=28Ω, VGS=10V, RG=4.5Ω | 2 |
| Turn-Off Fall Time | tf |  | 19.9 |  | ns | VDD=28V, RL=28Ω, VGS=10V, RG=4.5Ω | 2 |

## CAD (KiCad official)

- Symbol: `ME55N06A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `me55n06a-etched.step` / `me55n06a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me55n06a.step` / `me55n06a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MATSUKI datasheet](docs/me55n06a-datasheet.pdf) (5 pp, sha256 `75e3029a98929156`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/me55n06a-datasheet.pdf)