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ME50P06-G

Public Made by Adom

by adom

MATSUKI MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray me50p06-g: specified limits as data (metadata.characteristics, 27 rows from the datasheet) 3aed1d2 19d ago

ME50P06-G

MATSUKI · MOSFETs · TO-252-2(DPAK)

ME50P06-G from MATSUKI, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS limit of ±20 V, RDS(ON) ≤17 mΩ at VGS=-10 V and ≤20 mΩ at VGS=-4.5 V.
2 D passive Drain (center lead, shortened stub, connected to the tab); VDS rated -60 V and continuous drain current -61 A at TC=25℃.
3 S passive Source of the P-channel MOSFET; pulsed drain current up to -244 A.

Key specifications

Parameter Value
Manufacturer MATSUKI
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -61 A TC=25℃; device mounted on 1in² FR4 board, 2 oz copper 1
Continuous Drain Current ID -49 A TC=70℃; device mounted on 1in² FR4 board, 2 oz copper 1
Pulsed Drain Current IDM -244 A 1
Maximum Power Dissipation PD 114 W TC=25℃; device mounted on 1in² FR4 board, 2 oz copper 1
Maximum Power Dissipation PD 73 W TC=70℃; device mounted on 1in² FR4 board, 2 oz copper 1
Operating Junction Temperature TJ -55 150 ℃ 1
Thermal Resistance-Junction to Case RθJC 1.1 ℃/W device mounted on 1in² FR4 board, 2 oz copper 1
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS=0V, ID=-250μA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250μA 2
Gate Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V, VGS=0V 2
Drain-Source On-State Resistance RDS(ON) 14 17 mΩ VGS=-10V, ID=-17A 2
Drain-Source On-State Resistance RDS(ON) 16 20 mΩ VGS=-4.5V, ID=-14A 2
Diode Forward Voltage VSD -0.9 -1.2 V IS=-17A, VGS=0V 2
Total Gate Charge (10V) Qg 94 nC VDS=-30V, VGS=-10V, ID=-50A 2
Total Gate Charge (4.5V) Qg 46 nC VDS=-30V, VGS=-4.5V, ID=-50A 2
Gate-Source Charge Qgs 18 nC 2
Gate-Drain Charge Qgd 24 nC 2
Input Capacitance Ciss 4707 pF VDS=-15V, VGS=0V, F=1MHz 2
Output Capacitance Coss 373 pF 2
Reverse Transfer Capacitance Crss 336 pF 2
Turn-On Delay Time td(on) 53 ns VDS=-30V, RL=30Ω, VGEN=-10V, RG=6Ω 2
Turn-On Rise Time tr 19 ns 2
Turn-Off Delay Time td(off) 221 ns 2
Turn-Off Fall Time tf 61 ns 2

CAD (KiCad official)

  • Symbol: ME50P06-G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: me50p06-g-etched.step / me50p06-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); me50p06-g.step / me50p06-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MATSUKI datasheet (5 pp, sha256 02ca544678a126e1, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF