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ME4544D-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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ME4544D-VB

VBsemi Elec · MOSFETs · SO-8

ME4544D-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V VDS, 8 A package-limited ID).
2 G1 input Gate of the N-channel MOSFET (VGS rated ±20 V).
3 S2 passive Source of the P-channel MOSFET (-30 V VDS, -8 A package-limited ID).
4 G2 input Gate of the P-channel MOSFET (VGS rated ±20 V).
5 D2 passive Drain of the P-channel MOSFET, internally tied to pins 6 for current sharing.
6 D2 passive Drain of the P-channel MOSFET, internally tied to pin 5 for current sharing.
7 D1 passive Drain of the N-channel MOSFET, internally tied to pin 8 for current sharing.
8 D1 passive Drain of the N-channel MOSFET, internally tied to pin 7 for current sharing.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage N-Ch VGS -20 20 V TA = 25 °C 1
Gate-Source Voltage P-Ch VGS -20 20 V TA = 25 °C 1
Drain-Source Voltage N-Ch VDS 30 V TA = 25 °C 1
Drain-Source Voltage P-Ch VDS -30 V TA = 25 °C 1
Continuous Drain Current N-Ch ID 8 A TC = 25 °C, TJ = 150 °C, package limited 1
Continuous Drain Current P-Ch ID -8 A TC = 25 °C, TJ = 150 °C, package limited 1
Pulsed Drain Current N-Ch IDM 40 A 10 µs pulse width 1
Pulsed Drain Current P-Ch IDM -40 A 10 µs pulse width 1
Single Pulse Avalanche Current N-Ch IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Current P-Ch IAS 20 A L = 0.1 mH 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance N-Ch RthJA 50 62.5 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance P-Ch RthJA 47 62.5 °C/W t ≤ 10 s 1
Junction-to-Foot Thermal Resistance N-Ch RthJF 30 40 °C/W Steady State 1
Junction-to-Foot Thermal Resistance P-Ch RthJF 29 38 °C/W Steady State 1
Gate-Body Leakage N-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Gate-Body Leakage P-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current N-Ch IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current P-Ch IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current N-Ch IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current P-Ch IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current N-Ch ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current P-Ch ID(on) -20 A VDS = - 5 V, VGS = - 10 V 2
Total Gate Charge P-Ch Qg 41.5 63 nC VDS = - 20 V, VGS = - 10 V, ID = - 10 A 2
Gate Resistance P-Ch Rg 1.2 5.7 9.6 Ω f = 1 MHz 2
Turn-On Delay Time N-Ch td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time P-Ch td(on) 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
Rise Time N-Ch tr 10 17 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time P-Ch tr 9 15 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
Turn-Off Delay Time P-Ch td(off) 23 26 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
Fall Time N-Ch tf 5 9 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Fall Time P-Ch tf 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
Body Diode Voltage N-Ch VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage P-Ch VSD -0.77 -1.2 V IS = - 2 A 3
Body Diode Reverse Recovery Time P-Ch trr 31 57 ns IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge N-Ch Qrr 10 17 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge P-Ch Qrr 29 47 nC IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C 3
Forward Transconductance N-Ch gfs 27 S VDS = 15 V, ID = 6.8 A 2
Forward Transconductance P-Ch gfs 25 S VDS = - 15 V, ID = - 6.7 A 2

CAD (KiCad official)

  • Symbol: ME4544D-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: me4544d-vb-etched.step / me4544d-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); me4544d-vb.step / me4544d-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 07b86dde743b2a04, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF