# ME4425-G

**MATSUKI** · MOSFETs · SOP-8

ME4425-G from MATSUKI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; VDS rating -30 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; continuous drain current -10.6 A at TA=25℃. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; pulsed drain current up to -42 A. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS maximum ±20 V, threshold VGS(th) -1 to -3 V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; RDS(ON) 14 mΩ max at VGS=-10V. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; RDS(ON) 19 mΩ max at VGS=-4.5V. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; VDS rating -30 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; maximum power dissipation 2.5 W at TA=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) |  | -1 | -3 | V | VDS=VGS, ID=-250μA | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 10 | 14 | mΩ | VGS=-10V, ID= -9.1A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 15 | 19 | mΩ | VGS=-4.5V, ID= -6.9A | 2 |
| Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | IS=-2.1A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -10.6 |  |  | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | -8.5 |  |  | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | -42 |  |  | A |  | 1 |
| Avalanche Current | IAR | -44 |  |  | A |  | 1 |
| Avalanche Energy with Single Pulse | EAS |  |  | 96.8 | mJ | L=0.1mH | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TA=70℃ | 1 |
| Operating Junction Temperature | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance-Junction to Ambient | RθJA |  |  | 50 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 |

## CAD (KiCad official)

- Symbol: `ME4425-G`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `me4425-g-etched.step` / `me4425-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me4425-g.step` / `me4425-g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MATSUKI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603040478087049216) (5 pp, sha256 `cf905aae4d01fa7b`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/me4425-g-datasheet.pdf)