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ME3424D-G

Public Made by Adom

by adom

MATSUKI MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ME3424D-G

MATSUKI · MOSFETs · TSOP-6

ME3424D-G from MATSUKI, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, tied with pins 2, 5 and 6; VDS max 30V, continuous ID 5A at TA=25℃, pulsed IDM 20A.
2 D passive Drain, tied with pins 1, 5 and 6; VDS max 30V, continuous ID 5A at TA=25℃, pulsed IDM 20A.
3 G input Gate, ESD protected; VGS max ±20V, threshold 1V min to 3V max at ID=250µA.
4 S passive Source of the N-channel MOSFET.
5 D passive Drain, tied with pins 1, 2 and 6; VDS max 30V, continuous ID 5A at TA=25℃, pulsed IDM 20A.
6 D passive Drain, tied with pins 1, 2 and 5; VDS max 30V, continuous ID 5A at TA=25℃, pulsed IDM 20A.

Key specifications

Parameter Value
Manufacturer MATSUKI
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VBR(DSS) 30 V VGS=0V, ID=250μA 2
Gate Threshold Voltage VGS(th) 1 1.5 3 V VDS=VGS, ID=250μA 2
Gate Leakage Current IGSS -10 10 μA VDS=0V, VGS=±16V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Drain-Source On-Resistance RDS(ON) 23 28 mΩ VGS=10V, ID=6.7A 2
Drain-Source On-Resistance RDS(ON) 32 42 mΩ VGS=4.5V, ID=5.0A 2
Diode Forward Voltage VSD 0.8 1.2 V IS=1.7A, VGS=0V 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 5 A TA=25℃ 1
Continuous Drain Current ID 4 A TA=70℃ 1
Pulsed Drain Current IDM 20 A 1
Maximum Power Dissipation PD 1.1 W TA=25℃ 1
Maximum Power Dissipation PD 0.7 W TA=70℃ 1
Operating Junction Temperature TJ -55 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Thermal Resistance-Junction to Ambient RθJA 110 ℃/W 1
Input Capacitance Ciss 370 pF VDS=15V, VGS=0V, f=1MHZ 2
Output Capacitance COSS 68 pF VDS=15V, VGS=0V, f=1MHZ 2
Reverse Transfer Capacitance Crss 21 pF VDS=15V, VGS=0V, f=1MHZ 2
Gate Resistance Rg 1.9 Ω f=1MHz 2
Total Gate Charge Qg 12 nC VDS=15V, VGS=10V, ID=6.7A 2
Total Gate Charge Qg 5.7 nC VDS=15V, VGS=4.5V, ID=6.7A 2
Gate-Source Charge Qgs 3 nC VDS=15V, VGS=4.5V, ID=6.7A 2
Gate-Drain Charge Qgd 2.1 nC VDS=15V, VGS=4.5V, ID=6.7A 2
Turn-On Delay Time td(on) 9.2 ns VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω 2
Turn-On Rise Time tr 13 ns VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω 2
Turn-Off Delay Time td(off) 33 ns VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω 2
Turn-Off Fall Time tf 3.7 ns VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω 2

CAD (KiCad official)

  • Symbol: ME3424D-G
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: me3424d-g-etched.step / me3424d-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); me3424d-g.step / me3424d-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MATSUKI datasheet (5 pp, sha256 4d1d796942d19bc5, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF