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Set visibility: public

Ray ·18922d1acd ·1mo ago ·parent ec70680
1 file changed +6−3
page.json+6−3
@@ -44,7 +44,7 @@         "number": "3",         "name": "SW",         "type": "output",-        "description": "Switch node. Drain of the internal high-side PMOS and low-side NMOS synchronous switch. Connect the external inductor (typ. 2.2uH) between SW and the output. Absolute max -0.3V to 6V. RDSon(PMOS) ~0.110\u03a9, RDSon(NMOS) ~0.13\u03a9."+        "description": "Switch node. Drain of the internal high-side PMOS and low-side NMOS synchronous switch. Connect the external inductor (typ. 2.2uH) between SW and the output. Absolute max -0.3V to 6V. RDSon(PMOS) ~0.110Ω, RDSon(NMOS) ~0.13Ω."       },       {         "number": "4",@@ -56,7 +56,7 @@         "number": "5",         "name": "FB",         "type": "input",-        "description": "Feedback input to the internal error amplifier. Regulated to VREF = 0.6V (\u00b12%). Set VOUT with an external resistor divider from VOUT to FB to GND: VOUT = 0.6V \u00d7 (1 + R1/R2). A small feed-forward capacitor (e.g. 10pF) across R1 improves transient response. VFB < 0.2V triggers short-circuit protection (500kHz operation)."+        "description": "Feedback input to the internal error amplifier. Regulated to VREF = 0.6V (±2%). Set VOUT with an external resistor divider from VOUT to FB to GND: VOUT = 0.6V × (1 + R1/R2). A small feed-forward capacitor (e.g. 10pF) across R1 improves transient response. VFB < 0.2V triggers short-circuit protection (500kHz operation)."       }     ],     "provenance": {@@ -120,5 +120,8 @@     "docs/me3104am5g-n-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file