component
ME2620
Public Made by Adomby adom
MATSUKI MOSFETs, SOT-223-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ME2620
MATSUKI · MOSFETs · SOT-223-3
ME2620 from MATSUKI, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level enhancement-mode gate, VGS maximum ±20 V, threshold 2 to 4 V at ID=250 µA. |
| 2 | D | passive | Drain; VDS maximum 200 V, continuous ID 1.4 A at TA=25℃ and pulsed IDM 5 A, also connected to the package tab. |
| 3 | S | passive | Source; connects to the body diode anode side and the low side of the 200 V N-channel MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOT-223-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=200V, VGS=0V | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 630 | 756 | mΩ | VGS=10V, ID=1.4A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=1A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 200 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | 1.4 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 1.1 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 5 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.2 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.4 | W | TA=70℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 57 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 | ||
| Total Gate Charge | Qg | 14.3 | nC | VDS=100V, VGS=10V, ID=1.4A | 2 | ||
| Gate-Source Charge | Qgs | 4.3 | nC | VDS=100V, VGS=10V, ID=1.4A | 2 | ||
| Gate-Drain Charge | Qgd | 5 | nC | VDS=100V, VGS=10V, ID=1.4A | 2 | ||
| Input Capacitance | Ciss | 583 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 27 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 6 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 6.2 | ns | VDS=100V, RL=71.4Ω, VGS=10V, RG=4.7Ω, ID=1.4A | 2 | ||
| Turn-On Rise Time | tr | 21.4 | ns | VDS=100V, RL=71.4Ω, VGS=10V, RG=4.7Ω, ID=1.4A | 2 | ||
| Turn-Off Delay Time | td(off) | 19.5 | ns | VDS=100V, RL=71.4Ω, VGS=10V, RG=4.7Ω, ID=1.4A | 2 | ||
| Turn-Off Fall Time | tf | 27.3 | ns | VDS=100V, RL=71.4Ω, VGS=10V, RG=4.7Ω, ID=1.4A | 2 |
CAD (KiCad official)
- Symbol:
ME2620 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223-3 (KiCad packages3D, STEP)
- 3D model files:
me2620-etched.step/me2620-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me2620.step/me2620.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
2579656786a4ef9d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ME2620
**MATSUKI** · MOSFETs · SOT-223-3
ME2620 from MATSUKI, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level enhancement-mode gate, VGS maximum ±20 V, threshold 2 to 4 V at ID=250 µA. |
| 2 | D | passive | Drain; VDS maximum 200 V, continuous ID 1.4 A at TA=25℃ and pulsed IDM 5 A, also connected to the package tab. |
| 3 | S | passive | Source; connects to the body diode anode side and the low side of the 200 V N-channel MOSFET. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOT-223-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS=0V, ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250μA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=200V, VGS=0V | 2 |
| Drain-Source On-Resistance | RDS(ON) | | 630 | 756 | mΩ | VGS=10V, ID=1.4A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=1A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | | | 200 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 1.4 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 1.1 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 5 | A | | 1 |
| Maximum Power Dissipation | PD | | | 2.2 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 1.4 | W | TA=70℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 57 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper | 1 |
| Total Gate Charge | Qg | | 14.3 | | nC | VDS=100V, VGS=10V, ID=1.4A | 2 |
| Gate-Source Charge | Qgs | | 4.3 | | nC | VDS=100V, VGS=10V, ID=1.4A | 2 |
| Gate-Drain Charge | Qgd | | 5 | | nC | VDS=100V, VGS=10V, ID=1.4A | 2 |
| Input Capacitance | Ciss | | 583 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 27 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 6 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) | | 6.2 | | ns | VDS=100V, RL=71.4Ω, VGS=10V, RG=4.7Ω, ID=1.4A | 2 |
| Turn-On Rise Time | tr | | 21.4 | | ns | VDS=100V, RL=71.4Ω, VGS=10V, RG=4.7Ω, ID=1.4A | 2 |
| Turn-Off Delay Time | td(off) | | 19.5 | | ns | VDS=100V, RL=71.4Ω, VGS=10V, RG=4.7Ω, ID=1.4A | 2 |
| Turn-Off Fall Time | tf | | 27.3 | | ns | VDS=100V, RL=71.4Ω, VGS=10V, RG=4.7Ω, ID=1.4A | 2 |
## CAD (KiCad official)
- Symbol: `ME2620`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223-3 (KiCad packages3D, STEP)
- 3D model files: `me2620-etched.step` / `me2620-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me2620.step` / `me2620.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MATSUKI datasheet](docs/me2620-datasheet.pdf) (5 pp, sha256 `2579656786a4ef9d`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/me2620-datasheet.pdf)