component
ME2306A
Public Made by Adomby adom
MATSUKI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| me2306a-etched.glb | 8d ago |
| me2306a-etched.step | 8d ago |
| me2306a-hero.glb | 8d ago |
| me2306a-hero.overlay.json | 8d ago |
| me2306a.glb | 8d ago |
| me2306a.kicad_mod | 8d ago |
| me2306a.kicad_sym | 8d ago |
| me2306a.lbr | 8d ago |
| me2306a.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
ME2306A
MATSUKI · MOSFETs · SOT-23
ME2306A from MATSUKI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level gate with VGS(th) 0.7 to 1.4 V and absolute maximum VGS of ±12 V. |
| 2 | S | passive | Source; connects to the body diode anode, and the device carries continuous drain current up to 5.38 A at TA=25℃. |
| 3 | D | passive | Drain; rated for VDS of 30 V, continuous ID of 5.38 A at TA=25℃ and pulsed IDM of 21.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 5.38 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 4.3 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 21.5 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.39 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.89 | W | TA=70℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 90 | ℃/W | Device mounted on 1 in2 FR4 board with 2 oz copper (footnote *) | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.7 | 1.4 | V | VDS=VGS, ID=250μA | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 25 | 32 | mΩ | VGS=10V, ID=4A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 29 | 38 | mΩ | VGS=4.5V, ID=3.5A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 39 | 50 | mΩ | VGS=2.5V, ID=2.8A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS=1.25A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
ME2306A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
me2306a-etched.step/me2306a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me2306a.step/me2306a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
00501f12846f9be6, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).