component
ME2302
Public Made by Adomby adom
MATSUKI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ME2302
MATSUKI · MOSFETs · SOT-23
ME2302 from MATSUKI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is limited to ±8 V (VGSS) absolute maximum. |
| 2 | S | passive | Source of the N-channel MOSFET; maximum body-diode continuous current is 1.6 A (IS). |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is limited to 20 V (VDSS) with continuous drain current of 2.8 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | 2.8 | A | tJ=150℃, TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 2.2 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | 1 | |||
| Maximum Body-Diode Continuous Current | IS | 1.6 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.25 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA=70℃ | 1 | ||
| Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | 77 | ℃/W | T≤10 sec | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | 105 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.9 | 1.2 | V | VDS=VGS, ID=250μA | 2 |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=20V, VGS=0V, TJ=55℃ | 2 | ||
| On-State Drain Current | ID(ON) | 6 | A | VDS≧5V, VGS=4.5V | 2 | ||
| On-State Drain Current | ID(ON) | 4 | A | VDS≧5V, VGS=2.5V | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 55 | 85 | mΩ | VGS=4.5V, ID=2.8A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 65 | 115 | mΩ | VGS=2.5V, ID=2.5A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 80 | 130 | mΩ | VGS=1.8V, ID=2.2A | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1.2 | V | IS=1A, VGS=0V | 2 | |
| Thermal Resistance-Junction to Case | RθJC | 70 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
ME2302 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
me2302-etched.step/me2302-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me2302.step/me2302.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
f67ef08340ef3e04, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ME2302
**MATSUKI** · MOSFETs · SOT-23
ME2302 from MATSUKI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is limited to ±8 V (VGSS) absolute maximum. |
| 2 | S | passive | Source of the N-channel MOSFET; maximum body-diode continuous current is 1.6 A (IS). |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is limited to 20 V (VDSS) with continuous drain current of 2.8 A at TA=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGSS | -8 | | 8 | V | | 1 |
| Continuous Drain Current | ID | | | 2.8 | A | tJ=150℃, TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 2.2 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | | 1 |
| Maximum Body-Diode Continuous Current | IS | | | 1.6 | A | | 1 |
| Maximum Power Dissipation | PD | | | 1.25 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA=70℃ | 1 |
| Operating Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | | | 77 | ℃/W | T≤10 sec | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | | | 105 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS=0V, ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.9 | 1.2 | V | VDS=VGS, ID=250μA | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±8V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS=20V, VGS=0V, TJ=55℃ | 2 |
| On-State Drain Current | ID(ON) | 6 | | | A | VDS≧5V, VGS=4.5V | 2 |
| On-State Drain Current | ID(ON) | 4 | | | A | VDS≧5V, VGS=2.5V | 2 |
| Drain-Source On-Resistance | RDS(ON) | | 55 | 85 | mΩ | VGS=4.5V, ID=2.8A | 2 |
| Drain-Source On-Resistance | RDS(ON) | | 65 | 115 | mΩ | VGS=2.5V, ID=2.5A | 2 |
| Drain-Source On-Resistance | RDS(ON) | | 80 | 130 | mΩ | VGS=1.8V, ID=2.2A | 2 |
| Diode Forward Voltage | VSD | | 0.75 | 1.2 | V | IS=1A, VGS=0V | 2 |
| Thermal Resistance-Junction to Case | RθJC | | 70 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `ME2302`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `me2302-etched.step` / `me2302-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me2302.step` / `me2302.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MATSUKI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586187640411967488) (5 pp, sha256 `f67ef08340ef3e04`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/me2302-datasheet.pdf)