Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

ME12P04

MATSUKI · MOSFETs · TO-252-2(DPAK)

ME12P04 from MATSUKI, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±25 V, with threshold VGS(th) of -1 V min to -3 V max at ID=-250μA.
2 D passive Drain (center lead, shown as a short stub in the drawing); VDS max -40 V, continuous ID -18.6 A at TC=25℃, pulsed IDM -75 A.
3 S passive Source of the P-channel MOSFET; RDS(ON) is 45 mΩ max at VGS=-10V and 80 mΩ max at VGS=-4.5V.

Key specifications

Parameter Value
Manufacturer MATSUKI
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID -18.6 A TC=25℃ 1
Continuous Drain Current ID -15 A TC=70℃ 1
Pulsed Drain Current IDM -75 A 1
Maximum Power Dissipation PD 25 W TC=25℃ 1
Maximum Power Dissipation PD 16 W TC=70℃ 1
Operating Junction Temperature TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS=0V, ID=-250μA 2
Gate Threshold Voltage VGS(th) -1 -1.9 -3 V VDS=VGS, ID=-250μA 2
Gate Leakage Current IGSS -100 100 nA VDS=0V, VGS=±25V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-40V, VGS=0V 2
Drain-Source On-State Resistance RDS(ON) 35 45 mΩ VGS=-10V, ID=-12A 2
Drain-Source On-State Resistance RDS(ON) 57 80 mΩ VGS=-4.5V, ID=-6A 2
Diode Forward Voltage VSD -0.78 -1.2 V IS=-1.7A, VGS=0V 2
Thermal Resistance-Junction to Case RθJC 5 ℃/W 1

CAD (KiCad official)

  • Symbol: ME12P04
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: me12p04-etched.step / me12p04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); me12p04.step / me12p04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MATSUKI datasheet (5 pp, sha256 b62c38bb1bba3d8e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF