component
MDU1532S-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MDU1532S-HXY
HXY MOSFET · MOSFETs · DFN-8(5x6)
MDU1532S-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (VDS max 30V, continuous source current 120A). |
| 2 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (VDS max 30V, continuous source current 120A). |
| 3 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (VDS max 30V, continuous source current 120A). |
| 4 | G | input | Gate of the N-channel MOSFET, rated VGS ±20V with threshold 1V min to 2.5V max at 250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (VDS 30V, ID 120A at TC=25°C). |
| 6 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (VDS 30V, ID 120A at TC=25°C). |
| 7 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (VDS 30V, ID 120A at TC=25°C). |
| 8 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (VDS 30V, ID 120A at TC=25°C). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25°C | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 120 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 57 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 360 | A | TC=25°C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 125 | mJ | TC=25°C | 1 | ||
| Total Power Dissipation | PD | 115 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=30V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 2.6 | 3.3 | mΩ | VGS=10V,ID=20A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 3.8 | 5 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1 | V | VGS=0V,IS=1A | 2 | ||
| Continuous Source Current | IS | 120 | A | 2 | |||
| Pulsed Source Current | ISM | 360 | A | 2 | |||
| Input Capacitance | Ciss | 2218 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 480 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 340 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 12.6 | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 | ||
| Rise Time | tr | 19.5 | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 | ||
| Turn-Off Delay Time | td(off) | 42.8 | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 | ||
| Fall Time | tf | 13.2 | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 | ||
| Total Gate Charge | Qg | 24 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 4.2 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | ||
| Gate-Drain Miller Charge | Qgd | 13 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | ||
| Reverse Recovery Time | Trr | 258 | NS | IS=1A, di/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 324 | NC | IS=1A, di/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
MDU1532S-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
mdu1532s-hxy-etched.step/mdu1532s-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdu1532s-hxy.step/mdu1532s-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
81b3a2d2820542d5, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MDU1532S-HXY
**HXY MOSFET** · MOSFETs · DFN-8(5x6)
MDU1532S-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (VDS max 30V, continuous source current 120A). |
| 2 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (VDS max 30V, continuous source current 120A). |
| 3 | S | passive | Source of the N-channel MOSFET, one of three paralleled source pins (VDS max 30V, continuous source current 120A). |
| 4 | G | input | Gate of the N-channel MOSFET, rated VGS ±20V with threshold 1V min to 2.5V max at 250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (VDS 30V, ID 120A at TC=25°C). |
| 6 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (VDS 30V, ID 120A at TC=25°C). |
| 7 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (VDS 30V, ID 120A at TC=25°C). |
| 8 | D | passive | Drain of the N-channel MOSFET, one of four paralleled drain pins (VDS 30V, ID 120A at TC=25°C). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | TC=25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25°C | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 120 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 57 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 360 | A | TC=25°C | 1 |
| Single Pulse Avalanche Energy | EAS | | | 125 | mJ | TC=25°C | 1 |
| Total Power Dissipation | PD | | | 115 | W | TC=25°C | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.3 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS=0V, VDS=30V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | | 2.6 | 3.3 | mΩ | VGS=10V,ID=20A | 2 |
| Drain-Source On Resistance | RDS(ON) | | 3.8 | 5 | mΩ | VGS=4.5V,ID=10A | 2 |
| Source-Drain Diode Forward Voltage | VSD | | | 1 | V | VGS=0V,IS=1A | 2 |
| Continuous Source Current | IS | | | 120 | A | | 2 |
| Pulsed Source Current | ISM | | | 360 | A | | 2 |
| Input Capacitance | Ciss | | 2218 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 480 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 340 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) | | 12.6 | | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 |
| Rise Time | tr | | 19.5 | | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 |
| Turn-Off Delay Time | td(off) | | 42.8 | | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 |
| Fall Time | tf | | 13.2 | | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 |
| Total Gate Charge | Qg | | 24 | | nC | VGS=4.5V, VDS=15V, ID=20A | 2 |
| Gate-Source Charge | Qgs | | 4.2 | | nC | VGS=4.5V, VDS=15V, ID=20A | 2 |
| Gate-Drain Miller Charge | Qgd | | 13 | | nC | VGS=4.5V, VDS=15V, ID=20A | 2 |
| Reverse Recovery Time | Trr | | 258 | | NS | IS=1A, di/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 324 | | NC | IS=1A, di/dt=100A/µs, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `MDU1532S-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `mdu1532s-hxy-etched.step` / `mdu1532s-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mdu1532s-hxy.step` / `mdu1532s-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/mdu1532s-hxy-datasheet.pdf) (6 pp, sha256 `81b3a2d2820542d5`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mdu1532s-hxy-datasheet.pdf)