component
MDT9N20
Public Made by Adomby adom
Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MDT9N20
Minos · MOSFETs · TO-252
MDT9N20 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at ID=250µA. |
| 2 | D | passive | Drain (also the TO-252 tab); drain-to-source voltage 200 V, continuous drain current 9 A. |
| 3 | S | passive | Source; body diode continuous current 9 A, pulsed 36 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 200 | V | 2 | |||
| Continuous Drain Current | ID | 9 | A | 2 | |||
| Continuous Drain Current | ID | 5.5 | A | TC = 100 °C | 2 | ||
| Pulsed Drain Current | IDM | 36 | A | Note1 | 2 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | Note2: L=20mH, VDS=50V, Start TJ=25℃ | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note3: ISD=9A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 2 | ||
| Power Dissipation (TO-220, TO-251, TO-252) | PD | 75 | W | TO-220, TO-251, TO-252 (No FullPAK) | 2 | ||
| Operating Junction and Storage Temperature Range | TJ，Tstg | -55 | 150 | ℃ | 2 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 2 | |||
| Drain to Source Breakdown Voltage | VDSS | 200 | V | VGS=0V, ID=250µA | 3 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =200V, VGS= 0V, Tj= 25℃ | 3 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS =160V, VGS=0V, Tj = 125℃ | 3 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 3 | ||
| Gate to Source Reverse Leakage | IGSS(R) | 100 | nA | VGS =-30V | 3 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 0.27 | 0.32 | Ω | VGS=10V, ID=4A (Note4) | 3 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA (Note4) | 3 | |
| Continuous Source Current (Body Diode) | IS | 9 | A | TC=25 °C | 4 | ||
| Maximum Pulsed Current (Body Diode) | ISM | 36 | A | 4 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=9A, VGS=0V (Note4) | 4 | ||
| Junction-to-Case Thermal Resistance | RθJC | 1.67 | ℃/W | TO-220\TO-251\TO-252 (No FullPAK) | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | TO-220\TO-251\TO-252 (No FullPAK) | 2 |
CAD (KiCad official)
- Symbol:
MDT9N20 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mdt9n20-etched.step/mdt9n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdt9n20.step/mdt9n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (15 pp, sha256
429fc43e80a5e5db, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MDT9N20
**Minos** · MOSFETs · TO-252
MDT9N20 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at ID=250µA. |
| 2 | D | passive | Drain (also the TO-252 tab); drain-to-source voltage 200 V, continuous drain current 9 A. |
| 3 | S | passive | Source; body diode continuous current 9 A, pulsed 36 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 200 | V | | 2 |
| Continuous Drain Current | ID | | | 9 | A | | 2 |
| Continuous Drain Current | ID | | | 5.5 | A | TC = 100 °C | 2 |
| Pulsed Drain Current | IDM | | | 36 | A | Note1 | 2 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 200 | mJ | Note2: L=20mH, VDS=50V, Start TJ=25℃ | 2 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | Note3: ISD=9A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 2 |
| Power Dissipation (TO-220, TO-251, TO-252) | PD | | | 75 | W | TO-220, TO-251, TO-252 (No FullPAK) | 2 |
| Operating Junction and Storage Temperature Range | TJ，Tstg | -55 | | 150 | ℃ | | 2 |
| Maximum Temperature for Soldering | TL | | | 300 | ℃ | | 2 |
| Drain to Source Breakdown Voltage | VDSS | 200 | | | V | VGS=0V, ID=250µA | 3 |
| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS =200V, VGS= 0V, Tj= 25℃ | 3 |
| Drain to Source Leakage Current | IDSS | | | 100 | µA | VDS =160V, VGS=0V, Tj = 125℃ | 3 |
| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS =+30V | 3 |
| Gate to Source Reverse Leakage | IGSS(R) | | | 100 | nA | VGS =-30V | 3 |
| Drain-to-Source On-Resistance | RDS(ON) | | 0.27 | 0.32 | Ω | VGS=10V, ID=4A (Note4) | 3 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250µA (Note4) | 3 |
| Continuous Source Current (Body Diode) | IS | | | 9 | A | TC=25 °C | 4 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 36 | A | | 4 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=9A, VGS=0V (Note4) | 4 |
| Junction-to-Case Thermal Resistance | RθJC | | 1.67 | | ℃/W | TO-220\TO-251\TO-252 (No FullPAK) | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 62.5 | | ℃/W | TO-220\TO-251\TO-252 (No FullPAK) | 2 |
## CAD (KiCad official)
- Symbol: `MDT9N20`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mdt9n20-etched.step` / `mdt9n20-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mdt9n20.step` / `mdt9n20.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Minos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603127450033537024) (15 pp, sha256 `429fc43e80a5e5db`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mdt9n20-datasheet.pdf)