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MDT7N65

Public Made by Adom

by adom

Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MDT7N65

Minos · MOSFETs · TO-252

MDT7N65 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±30 V absolute maximum and threshold VGS(TH) of 2.0 to 4.0 V at ID=250µA.
2 D passive Drain, the middle lead (shortened stub) electrically common with the metal tab; VDSS is 650 V and continuous ID is 7 A at TC=25°C.
3 S passive Source; body diode continuous current IS is 7 A and pulsed 28 A, with RDS(ON) at most 1.2 Ω at VGS=10V, ID=3.5A.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 650 V 1
Continuous Drain Current ID 7 A 1
Continuous Drain Current ID 4.4 A TC = 100 °C 1
Pulsed Drain Current IDM 28 A 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 420 mJ 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns 1
Power Dissipation TO-252 PD 48 W TO-252 1
Derating Factor above 25°C 0.38 W/℃ 1
Operating Junction and Storage Temperature Range TJ，Tstg -55 150 ℃ 2
Maximum Temperature for Soldering 300 ℃ 2
Junction-to-Case RθJC 2.6 ℃/W TO-252 (No FullPAK) 2
Junction-to-Ambient RθJA 62.5 ℃/W TO-252 (No FullPAK) 2
Drain to Source Breakdown Voltage VDSS 650 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS =600V, VGS= 0V, Tj = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS =480V, VGS= 0V, Tj = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 1 1.2 Ω VGS=10V, ID=3.5A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Input Capacitance Ciss 1100 1500 PF VGS = 0V, VDS = 25V, F = 1.0MHz 3
Output Capacitance Coss 110 150 PF 3
Reverse Transfer Capacitance Crss 12 16 PF 3
Turn-on Delay Time td(ON) 15 40 ns ID =7A, VDD = 300V, VGS = 10V, RG =25Ω 3
Rise Time Tr 30 70 ns 3
Turn-Off Delay Time td(OFF) 110 11 ns 3
Fall Time tf 40 90 ns 3
Total Gate Charge Qg 28 37 nC ID =7A, VDS =480V, VGS = 10V 3
Continuous Source Current (Body Diode) IS 7 A TC=25 °C 3
Maximum Pulsed Current (Body Diode) ISM 28 A 3
Diode Forward Voltage VSD 1.4 V IS=7A, VGS=0V 3
Temperature Coefficient of Breakdown Voltage ΔBVDSS/ΔTJ 0.6 V/℃ ID=250uA, Reference25℃ 2
Gate Resistance Rg 25 Ω f = 1.0MHz 3
Gate to Source Charge Qgs 5 nC 3
Gate to Drain (Miller) Charge Qgd 11 nC 3
Reverse Recovery Time Trr 365 ns IS=7A, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Charge Qrr 3.4 nC 3

CAD (KiCad official)

  • Symbol: MDT7N65
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mdt7n65-etched.step / mdt7n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdt7n65.step / mdt7n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (8 pp, sha256 4951922a5f5ac139, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF