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MDT70N03

Public Made by Adom

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Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

MDT70N03

Minos · MOSFETs · TO-252

MDT70N03 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V absolute maximum, with VGS(th) of 1.0 V min to 1.4 V max at ID=250 μA.
2 D passive Drain, the middle lead which is also the exposed tab for heat dissipation; VDS is rated 30 V and continuous ID 70 A at TC=25℃.
3 S passive Source; the continuous body-diode forward current IS is 50 A max.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 70 A 1
Drain Current-Continuous (TC=100℃) ID (100℃) 35 A TC=100℃ 1
Pulsed Drain Current IDM 140 A 1
Maximum Power Dissipation PD 60 W 1
Single pulse avalanche energy EAS 225 mJ Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 30 33 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.1 1.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 6 8 mΩ VGS=10V, ID=25A 2
Drain-Source On-State Resistance RDS(ON) 8 12 mΩ VGS=4.5V, ID=20A 2
Forward Transconductance gFS 15 S VDS=5V,ID=20A 2
Diode Forward Voltage VSD 0.85 1.2 V VGS=0V,IS=25A 2
Diode Forward Current IS 50 A 2
Reverse Recovery Time trr 22 35 nS TJ = 25°C, IF = 25A, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 11 18 nC 2
Input Capacitance Clss 2000 pF VDS=15V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 280 pF 2
Reverse Transfer Capacitance Crss 160 pF 2
Turn-on Delay Time td(on) 10 nS VDD=15V,ID=25A, VGS=10V,RGEN=1.8Ω 2
Turn-on Rise Time tr 8 nS 2
Turn-Off Delay Time td(off) 30 nS 2
Turn-Off Fall Time tf 5 nS 2
Total Gate Charge Qg 23 nC VDS=10V,ID=25A, VGS=10V 2
Gate-Source Charge Qgs 7 nC 2
Gate-Drain Charge Qgd 4.5 nC 2
Thermal Resistance, Junction-to-Case RθJC 2.5 ℃/W Note 2 2
Derating factor 0.4 W/℃ 1

CAD (KiCad official)

  • Symbol: MDT70N03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mdt70n03-etched.step / mdt70n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdt70n03.step / mdt70n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (7 pp, sha256 c2c4af854fe48c56, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF