component
MDT40N06D
Public Made by Adomby adom
Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MDT40N06D
Minos · MOSFETs · TO-252
MDT40N06D from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the left lead in the package picture, with a maximum gate-source voltage of ±20 V and a gate threshold of 2 V min to 4 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain; the middle lead and the exposed tab, rated for VDS=60 V, ID=40 A continuous and 200 A pulsed. |
| 3 | S | passive | Source; the right lead in the package picture, carrying the body diode forward current (VSD max 1.2 V at IS=50 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 40 | A | 1 | |||
| Drain Current-Pulsed | IDM | 200 | A | 1 | |||
| Maximum Power Dissipation | PD | 87 | W | Tc=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 120 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.72 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 13 | 16 | mΩ | VGS=10V, ID=25A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=50A | 2 |
CAD (KiCad official)
- Symbol:
MDT40N06D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mdt40n06d-etched.step/mdt40n06d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdt40n06d.step/mdt40n06d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (7 pp, sha256
0cfae43ae56ac6c3, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MDT40N06D
**Minos** · MOSFETs · TO-252
MDT40N06D from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the left lead in the package picture, with a maximum gate-source voltage of ±20 V and a gate threshold of 2 V min to 4 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain; the middle lead and the exposed tab, rated for VDS=60 V, ID=40 A continuous and 200 A pulsed. |
| 3 | S | passive | Source; the right lead in the package picture, carrying the body diode forward current (VSD max 1.2 V at IS=50 A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 40 | A | | 1 |
| Drain Current-Pulsed | IDM | | | 200 | A | | 1 |
| Maximum Power Dissipation | PD | | | 87 | W | Tc=25℃ | 1 |
| Single pulse avalanche energy | EAS | | | 120 | mJ | | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | 1.72 | | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 13 | 16 | mΩ | VGS=10V, ID=25A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=50A | 2 |
## CAD (KiCad official)
- Symbol: `MDT40N06D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mdt40n06d-etched.step` / `mdt40n06d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mdt40n06d.step` / `mdt40n06d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Minos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590909261243904000) (7 pp, sha256 `0cfae43ae56ac6c3`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mdt40n06d-datasheet.pdf)