# MDT30N10

**Minos** · MOSFETs · TO-252

MDT30N10 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet labels this as the left lead of the TO-252 and rates VGS at ±20 V, with a gate threshold of 2 to 4 V at 250 µA. |
| 2 | D | passive | Drain; the datasheet labels the drain on the TO-252 tab (the trimmed centre lead position), rated VDS 100 V and ID 30 A continuous. |
| 3 | S | passive | Source; the datasheet labels this as the right lead of the TO-252 and shows it on the body-diode side of the schematic. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 30 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 100 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 70 | W | Tc=25℃ | 1 |
| Single pulse avalanche energy | EAS |  |  | 96 | mJ | Note 2: Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 3.5 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 25 | 30 | mΩ | VGS=10V, ID=12A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=20A | 2 |

## CAD (KiCad official)

- Symbol: `MDT30N10`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mdt30n10-etched.step` / `mdt30n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mdt30n10.step` / `mdt30n10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Minos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603127922068762624) (7 pp, sha256 `6304295c6596bcde`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mdt30n10-datasheet.pdf)