# MDT30N06L

**Minos** · MOSFETs · TO-252

MDT30N06L from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±20 V maximum, with a typical threshold of 1.8 V (1 V to 2.4 V) at ID=250 µA. |
| 2 | D | passive | Drain, connected to the exposed tab and the center lead (cut off on the 2L package); rated at VDS = 60 V, ID = 30 A continuous and 80 A pulsed. |
| 3 | S | passive | Source; carries the 30 A continuous drain current, and RDS(ON) is below 30 mΩ at VGS=10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 30 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 80 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 44 | W | Tc=25℃ | 1 |
| Single pulse avalanche energy | EAS |  |  | 56 | mJ | Note 2: Tj=25℃, VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 3.4 |  | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 25 | 30 | mΩ | VGS=10V, ID=10A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 30 | 40 | mΩ | VGS=4.5V, ID=10A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=20A | 2 |

## CAD (KiCad official)

- Symbol: `MDT30N06L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mdt30n06l-etched.step` / `mdt30n06l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mdt30n06l.step` / `mdt30n06l.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Minos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590457609930379264) (7 pp, sha256 `7c4c1d42b86a7bea`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mdt30n06l-datasheet.pdf)