component
MDT20N06
Public Made by Adomby adom
Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| mdt20n06-etched.glb | 16d ago |
| mdt20n06-etched.step | 16d ago |
| mdt20n06-hero.glb | 16d ago |
| mdt20n06-hero.overlay.json | 16d ago |
| mdt20n06.glb | 16d ago |
| mdt20n06.kicad_mod | 16d ago |
| mdt20n06.kicad_sym | 16d ago |
| mdt20n06.lbr | 16d ago |
| mdt20n06.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
MDT20N06
Minos · MOSFETs · TO-252
MDT20N06 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet labels it on the left lead of the TO-252-2L top view, with VGS rated ±20 V and VGS(th) 1.3 to 2.3 V at 250 µA. |
| 2 | D | passive | Drain, shown as the tab and middle stub of the TO-252-2L; VDS is rated 60 V and continuous ID 20 A (IDM 80 A pulsed). |
| 3 | S | passive | Source; the datasheet labels it on the right lead of the TO-252-2L top view, and the body diode has VSD of at most 1.2 V at IS=20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | 25 | 30 | mΩ | VGS=10V, ID=10A | 2 | |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 30 | 40 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 20 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 80 | A | TA=25℃; Note 1: repetitive, pulse width limited by max junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 44 | W | Tc=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 56 | mJ | Note 2: Tj=25℃,VDD=30V,VGS=10V,L=0.5mH,Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 3.4 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MDT20N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mdt20n06-etched.step/mdt20n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdt20n06.step/mdt20n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (7 pp, sha256
9dc080e17fbbdfac, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).