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docs mdt15n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
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mdt15n10-etched.glb mdt15n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
mdt15n10-etched.step mdt15n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
mdt15n10-hero.glb mdt15n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
mdt15n10-hero.overlay.json mdt15n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
mdt15n10.glb Publish 0.1.0 · Ray 24d ago
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package.json mdt15n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json mdt15n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md mdt15n10: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 19d ago

MDT15N10

Minos · MOSFETs · TO-252

MDT15N10 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V, with VGS(th) of 1 V min to 2.4 V max at ID=250 μA, and RDS(ON) is specified at VGS=10 V and 4.5 V.
2 D passive Drain, connected to the center lead and the exposed tab used for heat dissipation; drain-source voltage is rated 100 V and continuous drain current 15 A.
3 S passive Source; the body diode runs from source to drain, with VSD of 1.2 V max at IS=15 A.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.8 2.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 80 90 mΩ VGS=10V, ID=5A 2
Drain-Source On-State Resistance RDS(ON) 90 115 mΩ VGS=4.5V, ID=5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=15A 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 15 A 1
Drain Current-Pulsed IDM 40 A Note 1 1
Maximum Power Dissipation PD 31 W Tc=25℃ 1
Single pulse avalanche energy EAS 21 mJ Note 2: Tj=25℃,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 4.8 ℃/W 1

CAD (KiCad official)

  • Symbol: MDT15N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mdt15n10-etched.step / mdt15n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdt15n10.step / mdt15n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (7 pp, sha256 8f94db13cfb8faad, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF