component
MDT12N10L
Public Made by Adomby adom
Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMDT12N10L
Minos · MOSFETs · TO-252
MDT12N10L from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V, with RDS(ON) < 110 mΩ at VGS=10 V and < 120 mΩ at VGS=4.5 V. |
| 2 | D | passive | Drain (center lead, electrically common with the mounting tab); VDS rated 100 V, continuous ID 12 A, pulsed IDM 40 A. |
| 3 | S | passive | Source; body diode forward voltage VSD max 1.2 V at IS=12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 90 | 110 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 110 | 120 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=12A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 12 | A | 1 | |||
| Drain Current-Pulsed | IDM | 40 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 31 | W | Tc=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 21 | mJ | Note 2: Tj=25℃,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 4.8 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MDT12N10L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mdt12n10l-etched.step/mdt12n10l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdt12n10l.step/mdt12n10l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (7 pp, sha256
b0abb9121e1f228b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).