component
MDT08N06
Public Made by Adomby adom
Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| mdt08n06-etched.glb | 17d ago |
| mdt08n06-etched.step | 17d ago |
| mdt08n06-hero.glb | 17d ago |
| mdt08n06-hero.overlay.json | 17d ago |
| mdt08n06.glb | 17d ago |
| mdt08n06.kicad_mod | 17d ago |
| mdt08n06.kicad_sym | 17d ago |
| mdt08n06.lbr | 17d ago |
| mdt08n06.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MDT08N06
Minos · MOSFETs · TO-252
MDT08N06 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2 V min to 4 V max at ID=250μA. |
| 2 | D | passive | Drain (center lead, shorted to the metal tab); VDS rating 60 V, continuous ID 80 A, pulsed IDM 320 A. |
| 3 | S | passive | Source; carries the 80 A continuous drain current, body diode forward voltage VSD 1.2 V max at IS=80A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 80 | A | 1 | |||
| Drain Current-Pulsed | IDM | 320 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 107 | W | Tc=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 280 | mJ | Note 2 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.4 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 7 | 8 | mΩ | VGS=10V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=80A | 2 |
CAD (KiCad official)
- Symbol:
MDT08N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mdt08n06-etched.step/mdt08n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdt08n06.step/mdt08n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (6 pp, sha256
26c876d225711ea8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).