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MDD7N65D

Public Made by Adom

by adom

MDD Microdiode Semiconductor MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MDD7N65D

MDD Microdiode Semiconductor · MOSFETs · TO-252

MDD7N65D from MDD Microdiode Semiconductor, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage is rated at ±30 V, with a threshold of 2.0 to 4.0 V at VDS=VGS, ID=250μA.
2 Drain passive Drain terminal (also the tab); drain-source voltage is rated at 650 V, with continuous drain current of 7 A.
3 Source passive Source terminal; continuous body-diode forward current is 7 A.

Key specifications

Parameter Value
Manufacturer MDD Microdiode Semiconductor
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS=0V, ID=250μA 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 1.2 1.4 Ω VGS=10V, ID=3.5A 2
Gate-Source Leakage Current IGSS 100 nA VGS=30V, VDS=0V 2
Gate-Source Leakage Current (reverse) IGSS -100 nA 2
Drain-Source Leakage Current IDSS 1 uA VDS=650V, VGS=0V 2
Source Drain Current (Body Diode) ISD 7 A 2
Drain-Source Diode Forward Voltage VSD 1.5 V IS=7A, VGS=0V 2
Pulsed Current ISM 28 A 2
Turn on Delay Time td(on) 12.2 ns VDS=325V, ID=7A, RG=10Ω 2
Turn on Rise Time tr 33.4 ns VDS=325V, ID=7A, RG=10Ω 2
Turn Off Delay Time td(off) 53.6 ns VDS=325V, ID=7A, RG=10Ω 2
Turn Off Fall Time tf 15 ns VDS=325V, ID=7A, RG=10Ω 2
Input Capacitance Ciss 1090 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 111 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 6.1 pF VDS=25V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 20.7 nC VDS=520V, VGS=10V, ID=7A 2
Gate Source Charge Qgs 5.7 nC VDS=520V, VGS=10V, ID=7A 2
Gate Drain Charge Qgd 7.2 nC VDS=520V, VGS=10V, ID=7A 2
Body Diode Reverse Recovery Charge Qrr 2.1 uC IF=7A, -diF/dt=100A/µs 2
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 7 A 1
Power Dissipation TO-220/TO-252 PD 100 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Pulsed Drain Current IDM 28 A Pulse width limited by maximum junction temperature 1
Avalanche Energy Single Pulsed EAS 352 mJ L=10mH, IAS=8.4A, Starting Tj=25°C 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=7A, di/dt≤100A/us, VDD≤BVDS, Starting Tj=25°C 1
Diode pulse current IS,pulse 28 A 1
Continuous diode forward current IS 7 A 1
Thermal resistance, Junction-to-case (TO-220/TO-252) RθJC 1.25 °C/W 1
Thermal resistance, Junction-to-ambient (TO-220/TO-252) RθJA 62.5 °C/W 1

CAD (KiCad official)

  • Symbol: MDD7N65D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mdd7n65d-etched.step / mdd7n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdd7n65d.step / mdd7n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD Microdiode Semiconductor datasheet (9 pp, sha256 188008ebc7d44f41, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF