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MDD2N65D

Public Made by Adom

by adom

MDD Microdiode Semiconductor MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MDD2N65D

MDD Microdiode Semiconductor · MOSFETs · TO-252

MDD2N65D from MDD Microdiode Semiconductor, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±30 V.
2 Drain passive Drain terminal (also the tab), rated for a drain-source voltage of 650 V and a continuous drain current of 2 A.
3 Source passive Source terminal of the MOSFET, with a continuous body-diode forward current of 2 A.

Key specifications

Parameter Value
Manufacturer MDD Microdiode Semiconductor
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 2 A 1
Pulsed Drain Current IDM 8 A Pulse width limited by maximum junction temperature (Note 1) 1
Avalanche Energy Single Pulsed EAS 80 mJ L=10mH, IAS=4A, Starting Tj=25°C (Note 2) 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=2A, di/dt≤100A/us, VDD≤BVDS, Starting Tj=25°C (Note 3) 1
Power Dissipation TO-220/TO-252 PD 35 W 1
Continuous diode forward current IS 2 A 1
Diode pulse current IS,pulse 8 A 1
Junction Temperature TJ 150 °C 1
Storage Temperature Tstg -55 150 °C 1
Thermal resistance, Junction-to-case (TO-220/TO-252) RθJC 3.57 °C/W 1
Thermal resistance, Junction-to-ambient (TO-220/TO-252) RθJA 62 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS=0V, ID=250μA 2
Gate-Source Leakage Current IGSS 100 nA VGS=30V, VDS=0V 2
Gate-Source Leakage Current (second printed row) IGSS -100 nA 2
Drain-Source Leakage Current IDSS 1 uA VDS=650V, VGS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 4.2 5.2 Ω VGS=10V, ID=1A 2
Turn on Delay Time td(on) 17.2 ns VDS=325V, ID=2A, RG=10Ω (Note1,2) 2
Turn on Rise Time tr 35.6 ns VDS=325V, ID=2A, RG=10Ω (Note1,2) 2
Turn Off Delay Time td(off) 33.9 ns VDS=325V, ID=2A, RG=10Ω (Note1,2) 2
Turn Off Fall Time tf 29 ns VDS=325V, ID=2A, RG=10Ω (Note1,2) 2
Source drain current (Body Diode) ISD 2 A 2
Pulsed Current ISM 8 A 2

CAD (KiCad official)

  • Symbol: MDD2N65D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mdd2n65d-etched.step / mdd2n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdd2n65d.step / mdd2n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD Microdiode Semiconductor datasheet (9 pp, sha256 c57c09cdca7a828b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF