component

MDD2306

Public Made by Adom

by adom

MDD（Microdiode Electronics） MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsmdd2306factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

MDD2306

MDD（Microdiode Electronics） · MOSFETs · SOT-23

MDD2306 from MDD（Microdiode Electronics）, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with gate threshold VGS(TH) of 1.0 V min to 2.5 V max at ID=250μA.
2 S passive Source; continuous drain current rated 5.0 A, with body diode source current ISD of 1.8 A.
3 D passive Drain; drain-source voltage rated 30 V, with pulsed drain current IDM of 20.4 A.

Key specifications

Parameter Value
Manufacturer MDD（Microdiode Electronics）
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Continuous Drain Current ID 5 A TA=25℃ 1
Power Dissipation PD 1.5 W Note 2, TA=25℃ 1
Thermal Resistance from Junction to Ambient RθJA 80 ℃/W Note 2 1
Junction and Storage Temperature TJ,Tstg -50 150 ℃ 1
Pulsed Drain Current IDM 20.4 A Note 1 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 1 2.5 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 28 36 mΩ VGS=10V, ID=4A 2
Drain-Source On-State Resistance RDS(ON) 38 50 mΩ VGS=4.5V, ID=3A 2
Source drain current (Body Diode) ISD 1.8 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V IS=4A, VGS=0V 2
Output Capacitance Coss 35 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 30 pF VDS=15V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 6 nC VDS=15V, VGS=10V, ID=4A 2
Gate Source Charge Qgs 0.5 nC VDS=15V, VGS=10V, ID=4A 2
Gate Drain Charge Qgd 1.3 nC VDS=15V, VGS=10V, ID=4A 2
Turn on Delay Time td(on) 4.4 ns VDS=15V, VGS=10V, ID=1A, RG=3.3Ω 2
Turn on Rise Time tr 2.6 ns VDS=15V, VGS=10V, ID=1A, RG=3.3Ω 2
Turn Off Delay Time td(off) 25.5 ns VDS=15V, VGS=10V, ID=1A, RG=3.3Ω 2
Turn Off Fall Time tf 3.3 ns VDS=15V, VGS=10V, ID=1A, RG=3.3Ω 2

CAD (KiCad official)

  • Symbol: MDD2306
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mdd2306-etched.step / mdd2306-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdd2306.step / mdd2306.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD（Microdiode Electronics） datasheet (5 pp, sha256 9ff9dab4b5e4d4ca, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF