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page.json mdd2301: specified limits as data (metadata.characteristics, 14 rows from the datasheet) · Ray 23d ago
README.md mdd2301: specified limits as data (metadata.characteristics, 14 rows from the datasheet) · Ray 23d ago

MDD2301

MDD Microdiode Semiconductor · MOSFETs · SOT-23

MDD2301 from MDD Microdiode Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated at ±12 V (VGS) and the threshold is -0.4 V to -1 V at ID = -250 µA.
2 S passive Source of the MOSFET; the body diode source current is rated at -1.5 A maximum, and the diode forward voltage is -1.2 V typical at IS = -2 A.
3 D passive Drain of the MOSFET; drain-source voltage is -20 V and continuous drain current is -3.8 A, with pulsed drain current of -15 A.

Key specifications

Parameter Value
Manufacturer MDD Microdiode Semiconductor
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -3.8 A 1
Pulsed Drain Current IDM -15 A Note 1: pulse width limited by maximum junction temperature 1
Power Dissipation PD 1.2 W Note 2: 1 in² FR-4 board, 2oz Cu, still air, Ta=25℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Note 2: 1 in² FR-4 board, 2oz Cu, still air, Ta=25℃ 1
Junction and Storage Temperature TJ,Tstg -50 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS=0V, ID=250μA 2
Drain-Source Leakage Current (row labelled IDSS) IDSS -1 uA VDS=-20V, VGS=0V 2
Gate-Source Leakage Current (row labelled IGSS) IGSS -100 100 nA VGS=±10V, VDS=0V 2
Gate Threshold Voltage VGS(TH) -0.4 -1 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 33 45 mΩ VGS=-4.5V, ID=-3A 2
Drain-Source On-State Resistance RDS(ON) 46 60 mΩ VGS=-2.5V, ID=-2A 2
Source Drain Current (Body Diode) ISD -1.5 A 2

CAD (KiCad official)

  • Symbol: MDD2301
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mdd2301-etched.step / mdd2301-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdd2301.step / mdd2301.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD Microdiode Semiconductor datasheet (5 pp, sha256 0ad91fbcf6be4f51, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF