component
MDD2301
Public Made by Adomby adom
MDD Microdiode Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
mdd2301: specified limits as data (metadata.characteristics, 14 rows from the datasheet)
2 files changed
+197−1
README.md+21@@ -21,6 +21,27 @@ MDD2301 from MDD Microdiode Semiconductor, in a SOT-23. Pinout and pin descripti | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | -20 | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current | ID | | | -3.8 | A | | 1 |+| Pulsed Drain Current | IDM | | | -15 | A | Note 1: pulse width limited by maximum junction temperature | 1 |+| Power Dissipation | PD | | | 1.2 | W | Note 2: 1 in² FR-4 board, 2oz Cu, still air, Ta=25℃ | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 100 | ℃/W | Note 2: 1 in² FR-4 board, 2oz Cu, still air, Ta=25℃ | 1 |+| Junction and Storage Temperature | TJ,Tstg | -50 | | 150 | ℃ | | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS=0V, ID=250μA | 2 |+| Drain-Source Leakage Current (row labelled IDSS) | IDSS | | | -1 | uA | VDS=-20V, VGS=0V | 2 |+| Gate-Source Leakage Current (row labelled IGSS) | IGSS | -100 | | 100 | nA | VGS=±10V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(TH) | -0.4 | | -1 | V | VDS=VGS, ID=-250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 33 | 45 | mΩ | VGS=-4.5V, ID=-3A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 46 | 60 | mΩ | VGS=-2.5V, ID=-2A | 2 |+| Source Drain Current (Body Diode) | ISD | | | -1.5 | A | | 2 |+ ## CAD (KiCad official) - Symbol: `MDD2301`
page.json+176−1@@ -149,6 +149,181 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "0ad91fbcf6be4f51",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3.8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -15,+ "conditions": "Note 1: pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "Note 2: 1 in² FR-4 board, 2oz Cu, still air, Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Note 2: 1 in² FR-4 board, 2oz Cu, still air, Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ,Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -50,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current (row labelled IDSS)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-20V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current (row labelled IGSS)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±10V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.4,+ "typ": null,+ "max": -1,+ "conditions": "VDS=VGS, ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 33,+ "max": 45,+ "conditions": "VGS=-4.5V, ID=-3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 46,+ "max": 60,+ "conditions": "VGS=-2.5V, ID=-2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source Drain Current (Body Diode)",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +365,4 @@ "visibility": { "public": true }-}+}