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Generated by kicad-footprint-generator · KiCad file format 20260206
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viewers mdd2300: viewers · Ray 1mo ago
mdd2300-etched.glb mdd2300: factory component page (tier=lcsc) · Ray 1mo ago
mdd2300-etched.step mdd2300: factory component page (tier=lcsc) · Ray 1mo ago
mdd2300-hero.glb mdd2300: hero GLB from the etched model (keeps the MPN mark) · Ray 1mo ago
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mdd2300.glb Publish 0.1.0 · Ray 1mo ago
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page.json mdd2300: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 23d ago
README.md mdd2300: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 23d ago

MDD2300

MDD Microdiode Semiconductor · MOSFETs · SOT-23

MDD2300 from MDD Microdiode Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±12 V in the absolute maximum ratings.
2 Source passive Source terminal, the reference for the gate-source voltage, with body-diode source current rated at 0.2 A maximum.
3 Drain passive Drain terminal, rated for 20 V drain-source voltage and 6.2 A continuous drain current (24.8 A pulsed).

Key specifications

Parameter Value
Manufacturer MDD Microdiode Semiconductor
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 6.2 A 1
Power Dissipation PD 1.56 W Note 2 1
Pulsed Drain Current IDM 24.8 A Note 1 1
Junction Temperature and Storage Temperature TJ,Tstg -50 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 80 ℃/W Note 2 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250μA 2
Gate-Source Leakage Current (printed label; conditions indicate drain leakage) IDSS 1 uA VDS=20V, VGS=0V 2
Drain-Source Leakage Current (printed label; conditions indicate gate leakage) IGSS -100 100 nA VGS=±10V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 0.45 1 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 21.7 25 mΩ VGS=4.5V, ID=4.5A; Note 3 2
Drain-Source On-State Resistance RDS(ON) 29 35 mΩ VGS=2.5V, ID=2A 2
Source drain current (Body Diode) ISD 0.2 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V IS=4A, VGS=0V 2

CAD (KiCad official)

  • Symbol: MDD2300
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mdd2300-etched.step / mdd2300-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdd2300.step / mdd2300.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD Microdiode Semiconductor datasheet (5 pp, sha256 02cf7958ad1f3a9a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF