component
MDD2300
Public Made by Adomby adom
MDD Microdiode Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
mdd2300: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -21,6 +21,28 @@ MDD2300 from MDD Microdiode Semiconductor, in a SOT-23. Pinout and pin descripti | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 20 | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current | ID | | | 6.2 | A | | 1 |+| Power Dissipation | PD | | | 1.56 | W | Note 2 | 1 |+| Pulsed Drain Current | IDM | | | 24.8 | A | Note 1 | 1 |+| Junction Temperature and Storage Temperature | TJ,Tstg | -50 | | 150 | ℃ | | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 80 | ℃/W | Note 2 | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS=0V, ID=250μA | 2 |+| Gate-Source Leakage Current (printed label; conditions indicate drain leakage) | IDSS | | | 1 | uA | VDS=20V, VGS=0V | 2 |+| Drain-Source Leakage Current (printed label; conditions indicate gate leakage) | IGSS | -100 | | 100 | nA | VGS=±10V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(TH) | 0.45 | 1 | | V | VDS=VGS, ID=250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 21.7 | 25 | mΩ | VGS=4.5V, ID=4.5A; Note 3 | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 29 | 35 | mΩ | VGS=2.5V, ID=2A | 2 |+| Source drain current (Body Diode) | ISD | | | 0.2 | A | | 2 |+| Drain-Source Diode Forward Voltage | VSD | | 1.2 | | V | IS=4A, VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `MDD2300`
page.json+188−1@@ -147,6 +147,193 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "02cf7958ad1f3a9a",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.2,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.56,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 24.8,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature and Storage Temperature",+ "symbol": "TJ,Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -50,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current (printed label; conditions indicate drain leakage)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=20V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current (printed label; conditions indicate gate leakage)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±10V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.45,+ "typ": 1,+ "max": null,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 21.7,+ "max": 25,+ "conditions": "VGS=4.5V, ID=4.5A; Note 3",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 29,+ "max": 35,+ "conditions": "VGS=2.5V, ID=2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source drain current (Body Diode)",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.2,+ "max": null,+ "conditions": "IS=4A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +375,4 @@ "visibility": { "public": true }-}+}