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MD85E33SF4

Shanghai Mingda Microelectronics · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · ESOP-8

MD85E33SF4 from Shanghai Mingda Microelectronics, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VOUT power_out Regulated output voltage pin, 3.3V for MD85E33SF4, up to 300mA, needs 2.2uF or larger output capacitor.
2 NC unconnected No internal connection.
3 NC unconnected No internal connection.
4 EN input Enable pin: drive high (1.5V to 40V) to enable the device, drive low (0 to 0.6V) to put it into low current shutdown.
5 GND power_in Ground; the thermal pad is electrically connected to the GND node and should be connected to the GND plane.
6 NC unconnected No internal connection.
7 NC unconnected No internal connection.
8 VIN power_in Power input pin, operating range 2.2V to 40V (absolute maximum 45V), needs 2.2uF or larger input capacitor.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Shanghai Mingda Microelectronics
Package ESOP-8
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output Voltage (3.3V variant, ±2% accuracy factor) VOUT(S) 0.98 1.02 V VIN= VOUT(S)+2V, IOUT=1mA 4
Input Voltage VIN 2.2 40 V 4
EN 'H' Level Voltage VENH 1.5 40 V 4
EN 'L' Level Voltage VENL 0 0.6 V 4
Temperature Stability -50 50 ppm/℃ VIN = VOUT(S)+2V, IOUT=10mA, -40℃≤Ta≤125℃ 4
GND Current (no load, 3.0≤VOUT(S)≤5.3V) IGND 1 1.5 2.5 uA VEN=VIN, no load; 3.0≤VOUT(S)≤5.3V 4
Shutdown Current ISHUT 0.1 1 uA VIN=40.0V, VEN=0 4
EN 'H' Level Current IENH -0.1 0.1 uA VIN=40V, VEN=VIN 4
EN 'L' Level Current IENL -0.1 0.1 uA VIN=40V, VEN=0 4
Line Regulation 0.01 0.02 %/V VOUT(S)+2V≤VIN≤40V, IOUT=1mA 4
Load Regulation (VOUT(S)≤5.3V) 20 40 mV VIN = VOUT(S)+2V, 1mA≤IOUT≤300mA; VOUT(S)≤5.3V 4
Dropout Voltage (IOUT=1mA) VDROP 4 8 mV VEN=VIN, VOUT(S)=3.3V, IOUT=1mA 4
Dropout Voltage (IOUT=300mA) VDROP 1200 1800 mV VEN=VIN, VOUT(S)=3.3V, IOUT=300mA 4
Maximum Output Current IOUTMAX 300 350 mA 4
Current Limit ILIM 350 550 mA VIN= VOUT(S)+2V, VOUT = 0.95×VOUT(S) 4
Load Regulation (VOUT(S)>5.3V) 50 80 mV VIN = VOUT(S)+2V, 1mA≤IOUT≤300mA; VOUT(S)>5.3V 4
Absolute Maximum Input Voltage VIN -0.3 45 V 3
Power Dissipation (ESOP8) PD 1800 mW ESOP8 package 3
Operating Ambient Temperature Topr -40 85 ℃ 3
Storage Temperature Tstg -40 125 ℃ 3
ESD Protection (HBM) ESD HBM 5000 V 3
Thermal Resistance Junction-to-Board (ESOP8) RθJB 80 ℃/W Mounted on JEDEC standard 4layer (2s2p) PCB test board 3
Short Circuit Current ISHORT 65 mA VIN=VEN=VOUT(S)+2.0V, VOUT=0V 4
Power Supply Rejection Ratio PSRR 79 dB f=100Hz, IOUT=10mA 4
Power Supply Rejection Ratio PSRR 62 dB f=1kHz, IOUT=10mA 4
Power Supply Rejection Ratio PSRR 48 dB f=10kHz, IOUT=10mA 4
Power Supply Rejection Ratio PSRR 40 dB f=100kHz, IOUT=10mA 4
Over Temperature Protection OTP 170 ℃ IOUT=1mA 4

CAD (KiCad official)

  • Symbol: MD85E33SF4
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm
  • 3D model: ESOP-8 (KiCad packages3D, STEP)
  • 3D model files: md85e33sf4-etched.step / md85e33sf4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); md85e33sf4.step / md85e33sf4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shanghai Mingda Microelectronics datasheet (13 pp, sha256 b57d90f008c009b2, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF