# MD57E33WB6

**Shanghai Mingda Microelectronics** · Linear Voltage Regulators (LDO) · DFN-4-EP(1x1)

MD57E33WB6 from Shanghai Mingda Microelectronics, in a DFN-4-EP(1x1). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VIN | power_in | Input supply pin, operating range 2.2 V to 5.5 V (absolute maximum 6.0 V), with a 1 µF or larger input capacitor. |
| 2 | EN | input | Enable input, active high with VENH min 0.85 V and VENL max 0.35 V, internally pulled to GND by 1 MΩ, and low level activates the 240 Ω output auto-discharge. |
| 3 | GND | power_in | Ground pin. |
| 4 | VOUT | power_out | Regulated output (3.3 V for MD57E33WB6) delivering up to 300 mA, requires at least a 1 µF output capacitor which may be placed up to 10 cm away. |
| 5 | EP | passive | Exposed thermal pad of the DFN1*1-4L package; the datasheet shows it but states no connection. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Mingda Microelectronics |
| Package | DFN-4-EP(1x1) |
| Category | Power Management ICs |
| Pins | 5 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Dropout Voltage | VDROP |  |  | 120 | mV | VEN=VIN, VOUT>=3V IOUT=300mA | 4 |
| Line Regulation | ΔVOUT/ΔVIN |  | 0.02 | 0.1 | %/V | VOUT(S)+1.0V<=VIN=VEN<=5.5V IOUT=10mA | 4 |
| Line Transient | VOUT_Line | -1 |  |  | mV | VIN=VOUT+1V to VOUT+2V in 30us | 4 |
| Line Transient | VOUT_Line |  |  | 1 | mV | VIN=VOUT+2V to VOUT+1V in 30us | 4 |
| Load Regulation | VOUT2 |  | 10 | 20 | mV | VIN=VEN=VOUT(S)+1.0V 1mA<=IOUT<=300mA | 4 |
| Load Transient | VOUT_Load | -40 |  |  | mV | IOUT=1mA to 300mA in 10us | 4 |
| Load Transient | VOUT_Load |  |  | 40 | mV | IOUT=300mA to 1mA in 10us | 4 |
| Temperature Stability | ΔVOUT/(VOUT·ΔT) | -100 |  | 100 | ppm/℃ | VIN=VEN=VOUT(S)+1.0V IOUT=1mA, -40℃<=Ta<=125℃ | 4 |
| GND Current | IGND |  | 20 | 30 | µA | VEN=VIN no load | 4 |
| GND Current | IGND |  |  | 470 | µA | IOUT=300mA | 4 |
| Shutdown Current | ISHUT |  | 0.01 | 0.1 | µA | VIN=5.5V, VEN=0 | 4 |
| Input Voltage | VIN | 2.2 |  | 5.5 | V |  | 4 |
| Maximum Output Current | IOUTMAX |  | 250 | 300 | mA |  | 4 |
| Current Limit | ILIM |  | 500 |  | mA | VIN=VEN=VOUT(S)+1.0V VOUT = 0.95 ×VOUT(S) | 4 |
| COUT Auto Discharge | RDCHG |  | 240 |  | Ω | VEN=0, VOUT=VOUT(S) | 4 |
| Power Supply Rejection Ratio | PSRR |  | 94 |  | dB | f=1kHz, IOUT=20mA | 4 |
| Power Supply Rejection Ratio | PSRR |  | 72 |  | dB | f=10kHz, IOUT=20mA | 4 |
| Power Supply Rejection Ratio | PSRR |  | 77 |  | dB | f=100kHz, IOUT=20mA | 4 |
| Power Supply Rejection Ratio | PSRR |  | 53 |  | dB | f=1MHz, IOUT=20mA | 4 |
| Output Noise Voltage | eN |  | 20 |  | µVRMS | IOUT=20mA | 4 |
| Start-Up Time | TSTART |  | 80 | 150 | µs | From VEN>VENH to VOUT=95% of VOUT | 4 |
| Overshoot on Start-Up | VOUT_Start-up |  |  | 5 | % | Stated as a percentage of VOUT(S) | 4 |
| EN 'H' Level Voltage | VENH | 0.85 |  | 5.5 | V |  | 4 |
| EN 'L' Level Voltage | VENL | 0 |  | 0.35 | V |  | 4 |
| EN 'H' Level Current | IENH | -0.1 |  | 0.1 | µA | VIN=5.5V, VEN=VIN | 4 |
| EN 'L' Level Current | IENL | -0.1 |  | 0.1 | µA | VIN=5.5V, VEN=0 | 4 |
| Over Temperature Protection | OTP |  | 155 |  | ℃ | IOUT=1mA | 4 |
| Output Voltage | VOUT(S) | 0.98 |  | 1.02 | x VOUT(S) | VIN=VOUT(S)+1.0V IOUT=1mA, VOUT(S)>=2.0V | 4 |
| Input Voltage | VIN | -0.3 |  | 6 | V |  | 3 |
| Output Voltage | VOUT | -0.3 |  |  | V | Maximum is VIN+0.3V | 3 |
| Power Dissipation DFN1*1-4L | PD |  |  | 200 | mW |  | 3 |
| Thermal Resistance DFN1*1-4L | RθJB |  |  | 160 | ℃/W | Mounted on JEDEC standard 4 layer (2s2p) PCB test board | 3 |
| Operating Ambient Temperature | Topr | -40 |  | 85 | ℃ |  | 3 |
| Storage Temperature | Tstg | -40 |  | 125 | ℃ |  | 3 |
| ESD Protection HBM | ESD HBM |  |  | 6000 | V |  | 3 |
| Operating Junction Temperature | TJ | -40 |  | 125 | ℃ |  | 1 |
| Output Capacitor Range | COUT | 1 |  | 10 | µF | Output capacitor range | 10 |
| Input/Output Capacitor ESR Range | ESR | 5 |  | 500 | mΩ | Input/Output capacitor ESR range | 10 |

## CAD (KiCad official)

- Symbol: `MD57E33WB6`
- Footprint: `Package_DFN_QFN:UDFN-4-1EP_1x1mm_P0.65mm_EP0.48x0.48mm`
- 3D model: DFN-4-EP(1x1) (KiCad packages3D, STEP)
- 3D model files: `md57e33wb6-etched.step` / `md57e33wb6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `md57e33wb6.step` / `md57e33wb6.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shanghai Mingda Microelectronics datasheet](docs/md57e33wb6-datasheet.pdf) (12 pp, sha256 `42680ba6ee0683b4`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/md57e33wb6-datasheet.pdf)