component
MD52E25QC3
Public Made by Adomby adom
Shanghai Mingda Microelectronics Voltage Regulators - Linear, Low Drop Out (LDO) Regulators, SOT-23-5L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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MD52E25QC3
Shanghai Mingda Microelectronics · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · SOT-23-5L
MD52E25QC3 from Shanghai Mingda Microelectronics, in a SOT-23-5L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VIN | power_in | Positive supply input, 2.2V to 7.0V operating range (absolute max 8V). Bypass to GND with a ceramic capacitor ≥1.0μF placed close to the pin. |
| 2 | GND | power_in | Device ground reference. All internal voltages, the reference, and the feedback divider return here. |
| 3 | EN | input | Active-high enable input. VENH ≥ 1.0V (up to VIN, max 7.0V) turns the regulator on; VENL ≤ 0.38V puts the device into shutdown (ISHUT = 10nA typ at VIN=7.0V) and activates the internal COUT auto-discharge path (RDCHG ≈ 280-640Ω). Input current is ±0.1μA max; do not leave floating. |
| 4 | NC | unconnected | No internal connection. Leave floating or tie to GND for mechanical robustness. |
| 5 | VOUT | power_out | Regulated 2.5V output (±2% accuracy). Delivers up to 500mA with 230mV dropout at IOUT=500mA. Requires a low-ESR ceramic output capacitor ≥1.0μF for stability; do not force this pin above VIN+0.3V (reverse current via the P-MOSFET parasitic diode can destroy the IC). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Mingda Microelectronics |
| Package | SOT-23-5L |
| Category | Power Management (PMIC) |
| Pins | 5 |
Ordering variants
Same part, different packaging or reel option.
MD52E25QC3MD52E28QC3MD52E30QC3MD52E33QC3MD52E36QC3MD52E40QC3MD52E50QC3MD52E25QA3MD52E28QA3MD52E30QA3MD52E33QA3MD52E36QA3MD52E40QA3MD52E50QA3MD52A25PA1MD52A28PA1MD52A30PA1MD52A33PA1MD52A36PA1MD52A40PA1MD52A50PA1MD52E25WB6MD52E28WB6MD52E30WB6MD52E33WB6MD52E36WB6MD52E40WB6MD52E50WB6
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Output voltage accuracy (VOUT(S)≥2.0V) | VOUT | -2 | 2 | % | VIN=VOUT(S)+1.0V, IOUT=10mA | 4 | |
| Dropout voltage (VOUT<3V) | VDROP | 240 | mV | VEN=VIN, IOUT=500mA | 4 | ||
| Line regulation | 0.05 | 0.1 | %/V | VOUT(S)+0.5V≤VIN=VEN≤7V, IOUT=10mA | 4 | ||
| Load regulation | 50 | 90 | mV | VIN=VEN=VOUT(S)+1.0V, 1mA≤IOUT≤500mA | 4 | ||
| Temperature stability | -50 | 50 | ppm/℃ | VIN=VEN=VOUT(S)+1.0V, IOUT=1mA, -40℃≤Ta≤125℃ | 4 | ||
| GND current (no load) | IGND | 0.6 | 0.9 | μA | no load, VEN=VIN | 4 | |
| GND current (IOUT=500mA) | IGND | 210 | μA | IOUT=500mA | 4 | ||
| Shutdown current | ISHUT | 0.01 | 0.1 | μA | VIN=7.0V, VEN=0 | 4 | |
| EN 'H' level voltage | VENH | 1 | 7 | V | 4 | ||
| EN 'L' level voltage | VENL | 0 | 0.38 | V | 4 | ||
| EN 'H' level current | IENH | -0.1 | 0.1 | μA | VIN=7.0V, VEN=VIN | 4 | |
| EN 'L' level current | IENL | -0.1 | 0.1 | μA | VIN=7.0V, VEN=0 | 4 | |
| Input voltage range | VIN | 2.2 | 7 | V | 4 | ||
| Maximum output current | IOUTMAX | 450 | 500 | mA | 4 | ||
| COUT auto-discharge resistance | RDCHG | 280 | 450 | 640 | Ω | VEN=0, VOUT=VOUT(S) | 4 |
| Current limit | ILIM | 750 | mA | VIN=VEN=VOUT(S)+1.0V, VOUT = 0.95 ×VOUT(S) | 4 | ||
| Short circuit current | ISHORT | 50 | mA | VIN=VEN=VOUT(S)+1.0V, VOUT=0V | 4 | ||
| Power supply rejection ratio (f=10Hz) | PSRR | 64 | dB | f=10Hz, IOUT=10mA | 4 | ||
| Power supply rejection ratio (f=100Hz) | PSRR | 51 | dB | f=100Hz, IOUT=10mA | 4 | ||
| Power supply rejection ratio (f=1kHz) | PSRR | 34 | dB | f=1kHz, IOUT=10mA | 4 | ||
| Input voltage (absolute maximum) | VIN | -0.3 | 8 | V | 3 | ||
| Power dissipation (SOT23-5) | PD | 250 | mW | SOT23-5 package | 3 | ||
| Thermal resistance junction-to-board (SOT23-5) | RθJB | 180 | ℃/W | SOT23-5; mounted on JEDEC standard 4-layer (2s2p) PCB | 3 | ||
| Operating ambient temperature | Topr | -40 | 85 | ℃ | 3 | ||
| Storage temperature | Tstg | -40 | 125 | ℃ | 3 | ||
| ESD protection (HBM) | ESD HBM | 6000 | V | 3 | |||
| Input capacitor (CIN) | CIN | 1 | µF | Notes on use: input capacitor 1.0µF above | 3 | ||
| Output capacitor (COUT) | COUT | 1 | µF | Notes on use: output capacitor 1.0µF above | 3 | ||
| Nominal output voltage (MD52E25QC3) | VOUT | 2.5 | V | product selection for MD52E25QC3 | 2 |
CAD (KiCad official)
- Symbol:
MD52E25QC3 - Footprint:
Package_TO_SOT_SMD:SOT-23-5 - 3D model: SOT-23-5L (KiCad packages3D, STEP)
- 3D model files:
md52e25qc3-etched.step/md52e25qc3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);md52e25qc3.step/md52e25qc3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shanghai Mingda Microelectronics datasheet (None pp, sha256
4168b8cf3e52f15f, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).