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MD52E18WB6

Shanghai Mingda Microelectronics · Linear Voltage Regulators (LDO) · DFN1x1-4L

MD52E18WB6 from Shanghai Mingda Microelectronics, in a DFN1x1-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VIN power_in Power input with a 2.2V to 7V operating range (absolute maximum 8V), decoupled with a CIN of 1.0µF or more placed close to the IC.
2 EN input Active-high ON/OFF enable with VEN high of 1.0V to 7.0V and low of 0V to 0.38V, and a low level turns the IC off and enables COUT auto-discharge.
3 GND power_in Ground reference for the regulator.
4 VOUT power_out Regulated output (1.8V for MD52E18WB6) delivering up to 500mA, with COUT of 1.0µF or more and not to exceed VIN+0.3V.
5 EP passive Exposed pad of the DFN1*1-4L package; the datasheet does not state its connection.

Key specifications

Parameter Value
Manufacturer Shanghai Mingda Microelectronics
Package DFN1x1-4L
Category Power Management ICs
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output Voltage accuracy (VOUT(S)<2.0V, VIN=VOUT(S)+2.0V, IOUT=10mA) VOUT(S) -0.03 0.03 V VIN=VOUT(S)+2.0V, IOUT=10mA, VOUT(S)<2.0V 4
Line Regulation ΔVOUT/ΔVIN 0.05 0.1 %/V VOUT(S)+0.5V≤VIN=VEN≤7V, IOUT=10mA 4
Load Regulation VOUT2 50 90 mV VIN=VEN=VOUT(S)+1.0V, 1mA≤IOUT≤500mA 4
Temperature Stability ΔVOUT/ΔT -50 50 ppm/℃ VIN=VEN=VOUT(S)+1.0V, IOUT=1mA, -40℃≤Ta≤125℃ 4
GND Current (no load) IGND 0.6 0.9 μA VEN=VIN, no load 4
GND Current (IOUT=500mA) IGND 210 μA VEN=VIN, IOUT=500mA 4
Shutdown Current ISHUT 0.01 0.1 μA VIN=7.0V, VEN=0 4
Input Voltage VIN 2.2 7 V 4
Maximum Output Current IOUTMAX 450 500 mA 4
Current Limit ILIM 750 mA VIN=VEN=VOUT(S)+1.0V, VOUT = 0.95 ×VOUT(S) 4
Short Circuit Current ISHORT 50 mA VIN=VEN=VOUT(S)+1.0V, VOUT=0V 4
COUT Auto Discharge Resistance RDCHG 280 450 640 Ω VEN=0, VOUT=VOUT(S) 4
EN ‘H’ Level Voltage VENH 1 7 V 4
EN ‘L’ Level Voltage VENL 0 0.38 V 4
EN ‘H’ Level Current IENH -0.1 0.1 μA VIN=7.0V, VEN=VIN 4
EN ‘L’ Level Current IENL -0.1 0.1 μA VIN=7.0V, VEN=0 4
Dropout Voltage (VOUT<3V) VDROP 240 mV VEN=VIN, VOUT<3V, IOUT=500mA 4
Power Supply Rejection Ratio (f=10Hz) PSRR 64 dB f=10Hz, IOUT=10mA 4
Power Supply Rejection Ratio (f=100Hz) PSRR 51 dB f=100Hz, IOUT=10mA 4
Power Supply Rejection Ratio (f=1kHz) PSRR 34 dB f=1kHz, IOUT=10mA 4
Input Voltage (absolute maximum) VIN -0.3 8 V 3
Power Dissipation PD 200 mW DFN1*1-4L 3
ESD Protection HBM ESD HBM 6000 V 3
Operating Ambient Temperature Topr -40 85 ℃ 3
Storage Temperature Tstg -40 125 ℃ 3
Thermal Resistance Junction-to-Board RθJB 160 ℃/W DFN1*1-4L, mounted on JEDEC standard 4layer (2s2p) PCB test board 3
Input Capacitor (CIN) CIN 1 µF Notes on Use: 1.0µF above 3
Output Capacitor (COUT) COUT 1 µF Notes on Use: 1.0µF above 3

CAD (KiCad official)

  • Symbol: MD52E18WB6
  • Footprint: Package_DFN_QFN:UDFN-4-1EP_1x1mm_P0.65mm_EP0.48x0.48mm
  • 3D model: DFN1x1-4L (KiCad packages3D, STEP)
  • 3D model files: md52e18wb6-etched.step / md52e18wb6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); md52e18wb6.step / md52e18wb6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shanghai Mingda Microelectronics datasheet (14 pp, sha256 11f4b5d8b0feb201, retrieved 2026-11-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF