component

MD20N60

Public Made by Adom

by adom

Minos MOSFETs, TO-3P-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistormd20n60factory-2.0.0extractor-text

Verified MD20N60

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: MD20N60 · TO-3P-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 12-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-3P-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-v9bpvcbu/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ md20n60.kicad_sym✓ md20n60.kicad_mod✓ md20n60.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

MD20N60

Minos · MOSFETs · TO-3P-3

MD20N60 from Minos, in a TO-3P-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input; gate-to-source voltage is rated at ±30 V maximum with a threshold of 2.0 to 4.0 V at ID=250uA.
2 Drain passive Drain terminal, rated for 600 V drain-to-source voltage and 20 A continuous drain current (80 A pulsed).
3 Source passive Source terminal, which is also the body diode anode, rated for 20 A continuous source current (80 A pulsed).

Key specifications

Parameter Value
Manufacturer Minos
Package TO-3P-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 600 V 2
Continuous Drain Current ID 20 A 2
Continuous Drain Current ID 12.6 A Tc = 100C 2
Pulsed Drain Current IDM 80 A Note1 2
Gate-to-Source Voltage VGS 30 V 2
Single Pulse Avalanche Energy EAS 1200 mJ Note2: L=10mH, VDs=50V, Start TJ=25℃ 2
Peak Diode Recovery dv/dt dv/dt 5 V/ns Note3: ISD=20A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ 2
Power Dissipation PD 300 W TO-247, TO-3PN 2
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 2
Maximum Temperature for Soldering TL 300 ℃ 2
Drain to Source Breakdown Voltage VDSS 650 V VGS=0V, ID=250µA 3
Drain to Source Leakage Current IDSS 10 µA VDS=650V, VGS=0V, Tj=25℃ 3
Drain to Source Leakage Current IDSS 100 µA VDS=520V, VGS=0V, Tj=125℃ 3
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=+30V 3
Gate to Source Reverse Leakage IGSS(R) 100 nA VGS=-30V 3
Drain-to-Source On-Resistance RDS(ON) 0.39 0.46 Ω VGS=10V, ID=10A (Note4) 3
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250uA (Note4) 3
Continuous Source Current (Body Diode) IS 20 A TC=25°C 4
Maximum Pulsed Current (Body Diode) ISM 80 A 4
Diode Forward Voltage VSD 1.2 V IS=20A, VGS=0V (Note4) 4
Drain to Source Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.65 V/℃ ID=250µA, Reference 25℃ 3
Forward Transconductance gfs 12 S VDS=20V, ID=10A (Note4) 3
Gate resistance Rg 1.5 Ω f = 1.0MHz 4
Input Capacitance Ciss 3120 pF VGS = 0V, VDS = 25V, f = 1.0MHz 4
Output Capacitance Coss 250 pF 4
Reverse Transfer Capacitance Crss 15 pF 4
Turn-on Delay Time td(ON) 53 ns ID =20A, VDD = 325V, VGS = 10V, RG =20Ω 4
Rise Time tr 85 ns 4
Turn-Off Delay Time td(OFF) 99 ns 4
Fall Time Tf 93 ns 4
Total Gate Charge Qg 62 nC ID =20A, VDD =520V, VGS = 10V 4
Gate to Source Charge Qgs 15 nC 4
Gate to Drain (Miller) Charge Qgd 24.5 nC 4
Reverse Recovery Time Trr 556 ns IS=20A, Tj=25°C, dIF/dt=100A/us, VGS=0V 4
Reverse Recovery Charge Qrr 6143 nC 4
Reverse Recovery Current Irrm 22.1 A 4
Junction-to-Case Thermal Resistance RθJC 0.42 ℃/W TO-247/TO-3PN 2
Junction-to-Ambient Thermal Resistance RθJA 40 ℃/W TO-247/TO-3PN 2
Derating Factor above 25°C PD 2.38 W/℃ TO-247, TO-3PN 2

CAD (KiCad official)

  • Symbol: MD20N60
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P-3 (KiCad packages3D, STEP)
  • 3D model files: md20n60-etched.step / md20n60-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); md20n60.step / md20n60.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (12 pp, sha256 c4d08b9c30769b13, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF