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MCR100-8W

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FUXINSEMI Thyristors (SCR)/Modules, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MCR100-8W

FUXINSEMI · Thyristors (SCR)/Modules · SOT-223

MCR100-8W from FUXINSEMI, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode (K1) of the SCR; the datasheet lists VRRM of 600 / 800 V and IT(RMS) of 1.0 A.
2 A passive Anode (A2) of the SCR, which is also the tab; the datasheet lists VDRM of 600 / 800 V and a surge current ITSM of 12 A.
3 G input Gate (G3) trigger input; the datasheet gives IGT max 100 μA and VGT max 0.8 V at VD=12V, IT=10mA, Tj=25℃, with peak gate current IGM of 0.5 A.

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 800 V 2
Repetitive peak reverse voltage VRRM 800 V 2
RMS on-state current IT(RMS) 1 A 2
Non repetitive surge peak on-state current ITSM 12 A full cycle, F=50Hz 2
I2t value for fusing I2t 0.72 A2s tp=10ms 2
Critical rate of rise of on-state current dIT/dt 50 A/μs IG=2×IGT 2
Peak gate current IGM 0.5 A 2
Average gate power dissipation PG(AV) 0.1 W 2
Junction Temperature TJ -40 110 ℃ 2
Storage Temperature TSTG -40 150 ℃ 2
Gate trigger current IGT 100 μA VD =12V IT=10mA Tj =25℃ 2
Gate trigger voltage VGT 0.8 V 2
Gate non-trigger voltage VGD 0.2 V VD =1/2VDRM Tj =110℃ 2
Latching current IL 5 mA VD =12V IG=0.5mA RGK=1kΩ Tj =25℃ 2
Holding current IH 4 mA 2
Critical-rate of rise of commutation voltage dVD/dt 50 V/μs VD=2/3VDRM Gate Open Tj =110℃ 2
Forward on voltage VTM 1.7 V ITM =2A tp=380μs 2
Repetitive Peak Off-State Current IDRM 5 μA VD =VDRM VR =VRRM Tj=25℃ 2
Repetitive Peak Reverse Current IRRM 0.1 mA Tj=110℃ 2
Thermal resistance junction to case Rth(j-c) 20 ℃/W Junction to case 2
Thermal resistance junction to ambient Rth(j-a) 60 ℃/W Junction to ambient 2

CAD (KiCad official)

  • Symbol: MCR100-8W
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: mcr100-8w-etched.step / mcr100-8w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mcr100-8w.step / mcr100-8w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (4 pp, sha256 05f17ead0ad177ba, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF