# MCQ05P10Y-TP

**MCC(Micro Commercial Components)** · MOSFETs · SOP-8

MCQ05P10Y-TP from MCC(Micro Commercial Components), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, shorted with pins 2 and 3 externally; VDS rated -100V and continuous drain current -4.5A at TA=25°C. |
| 2 | S | passive | Source of the P-channel MOSFET, shorted with pins 1 and 3 externally; VDS rated -100V and continuous drain current -4.5A at TA=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, shorted with pins 1 and 2 externally; VDS rated -100V and continuous drain current -4.5A at TA=25°C. |
| 4 | G | input | Gate of the P-channel MOSFET with gate-source voltage rated ±20V and threshold VGS(th) of -1.0V min to -2.5V max. |
| 5 | D | passive | Drain of the P-channel MOSFET, connected to pins 6, 7 and 8; VDS max -100V and pulsed drain current -18A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 7 and 8; VDS max -100V and pulsed drain current -18A. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 6 and 8; VDS max -100V and pulsed drain current -18A. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 6 and 7; VDS max -100V and pulsed drain current -18A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MCC(Micro Commercial Components) |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -4.5 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID |  |  | -2.8 | A | TA=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | -18 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 1.6 | W |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 56 | mJ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance Junction to Ambient | RθJA |  |  | 75 | °C/W | Steady-State | 1 |
| Thermal Resistance Junction to Lead | RθJL |  |  | 24 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 |  |  | V | VGS=0V, ID=-250µA | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS =±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-100V, VGS=0V | 2 |
| Gate-Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 83 | 110 | mΩ | VGS=-10V, ID=-3A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 95 | 120 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Continuous Body Diode Current | IS |  |  | -4.5 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.3 | V | VGS=0V, IS=-3A | 2 |
| Reverse Recovery Time | trr |  | 40 |  | ns | IS=-5A, dIF/dt=100A/μs | 2 |
| Reverse Recovery Charge | Qrr |  | 80 |  | nC | IS=-5A, dIF/dt=100A/μs | 2 |
| Input Capacitance | Ciss |  | 1062 |  | pF | VDS=-50V,VGS=0V,f=1MHz | 2 |
| Output Capacitance | Coss |  | 112 |  | pF | VDS=-50V,VGS=0V,f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 8.7 |  | pF | VDS=-50V,VGS=0V,f=1MHz | 2 |
| Total Gate Charge | Qg |  | 19 |  | nC | VDS=-50V,VGS=-10V,ID=-5A | 2 |
| Gate-Source Charge | Qgs |  | 3 |  | nC | VDS=-50V,VGS=-10V,ID=-5A | 2 |
| Gate-Drain Charge | Qgd |  | 3.5 |  | nC | VDS=-50V,VGS=-10V,ID=-5A | 2 |
| Turn-On Delay Time | td(on) |  | 7.4 |  | ns | VDD=-50V, VGS=-10V, RGEN=6Ω, ID=-5A | 2 |
| Turn-On Rise Time | tr |  | 9.3 |  | ns | VDD=-50V, VGS=-10V, RGEN=6Ω, ID=-5A | 2 |
| Turn-Off Delay Time | td(off) |  | 58 |  | ns | VDD=-50V, VGS=-10V, RGEN=6Ω, ID=-5A | 2 |
| Turn-Off Fall Time | tf |  | 19 |  | ns | VDD=-50V, VGS=-10V, RGEN=6Ω, ID=-5A | 2 |
| Gate Resistance | Rg |  | 9.8 |  | Ω | F=1 MHz, Open drain | 2 |

## CAD (KiCad official)

- Symbol: `MCQ05P10Y-TP`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `mcq05p10y-tp-etched.step` / `mcq05p10y-tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mcq05p10y-tp.step` / `mcq05p10y-tp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MCC(Micro Commercial Components) datasheet](docs/mcq05p10y-tp-datasheet.pdf) (6 pp, sha256 `13b2c8a9d23b8f55`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mcq05p10y-tp-datasheet.pdf)