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Contents

README

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MCP6N11-005E

Microchip Tech · Instrumentation Amplifiers · SOIC-8

MCP6N11-005E from Microchip Tech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VFG input Analog feedback input, the inverting input of the second input stage, to which external feedback resistors RF and RG connect; it is a high-impedance CMOS input with low bias current.
2 VIM input Inverting analog signal input of the instrumentation amplifier, a high-impedance CMOS input with low bias currents.
3 VIP input Non-inverting analog signal input of the instrumentation amplifier, a high-impedance CMOS input with low bias currents.
4 VSS power_in Negative power supply; VDD must be 1.8V to 5.5V higher than VSS, and in single-supply use VSS is connected to ground while all other pins stay between VSS and VDD.
5 VREF power_in Analog reference input, the non-inverting input of the second input stage that shifts VOUT to its desired range; the external gain resistor RG connects here, and it is a high-impedance CMOS input with low bias current.
6 VOUT output Low-impedance analog output representing the differential input VDM = VIP - VIM multiplied by gain GDM and shifted by VREF; the external feedback resistor RF connects to this pin.
7 VDD power_in Positive power supply, 1.8V to 5.5V above VSS, which requires bypass capacitors.
8 EN/CAL input CMOS Schmitt-triggered digital input: driving it low places the part in low-power mode with the output high-Z, and driving it high runs VOS calibration and then reconnects VOUT to normal low-impedance operation.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package SOIC-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Offset Voltage, Calibrated (GMIN = 5) VOS -0.85 0.85 mV 3
Input Offset Voltage Drift (GMIN = 5, Max. per Table 1) ΔVOS/ΔTA -18 18 µV/°C TA= -40°C to +125°C 2
Input Bias Current, across temperature IB 0 2 5 nA TA= +125°C 4
Input Offset Current, across temperature IOS -1 0.05 1 nA TA= +125°C 4
Power Supply Rejection Ratio (GMIN = 5) PSRR 75 96 dB 3
Common Mode Rejection Ratio (GMIN = 5, VDD = 1.8V) CMRR 75 101 dB VCM = VIVL to VIVH, VDD = 1.8V 4
Common Mode Rejection Ratio (GMIN = 5, VDD = 5.5V) CMRR 80 108 dB VCM = VIVL to VIVH, VDD = 5.5V 4
Common Mode Non-Linearity (GMIN = 5, VDD = 1.8V) INLCM -230 11 230 ppm VCM = VIVL to VIVH, VDM = 0V, VDD = 1.8V (Note 7) 4
Common Mode Non-Linearity (GMIN = 5, VDD = 5.5V) INLCM -100 4 100 ppm VCM = VIVL to VIVH, VDM = 0V, VDD = 5.5V (Note 7) 4
Differential Input Voltage Range, maximum (GMIN = 5, per Table 1) VDMH 0.54 V 2
Differential Gain Error gE -1 0.13 1 % VDM = VDML to VDMH, VREF = (VDD -GDMVDM)/2 5
Differential Non-Linearity (GMIN = 5) INLDM -800 40 800 ppm 5
DC Open-Loop Gain (GMIN = 5, VDD = 1.8V) AOL 76 98 dB VDD = 1.8V, VOUT = 0.2V to 1.6V 5
DC Open-Loop Gain (GMIN = 5, VDD = 5.5V) AOL 84 108 dB VDD = 5.5V, VOUT = 0.2V to 5.3V 5
Gain Bandwidth Product (GMIN = 5, Max. per Table 1) GBWP 2.5 MHz 2
Supply Voltage VDD 1.8 5.5 V 5
Quiescent Current per Amplifier IQ 0.5 0.8 1.1 mA IO = 0 5
POR Trip Voltage (falling) VPRL 1.1 1.4 V 5
POR Trip Voltage (rising) VPRH 1.4 1.7 V 5
GND Current, EN/CAL low ISS -7 -2.5 µA EN/CAL = 0V, VDD = 5.5V 7
EN/CAL Low to Amplifier Output High-Z Turn-off Time tOFF 3 10 µs EN/CAL = 0.2VDD to VOUT = 0.1(VDD/2), VDMGDM = 1 V, VL = 0V 7
EN/CAL High to Amplifier Output On Time tON 12 20 28 ms EN/CAL = 0.8VDD to VOUT = 0.9(VDD/2), VDMGDM = 1 V, VL = 0V 7
EN/CAL Low to EN/CAL High low time tENLH 100 µs Minimum time before externally releasing EN/CAL (Note 1) 7
VDD Rising to Output On tPLH 140 250 360 ms VL = 0V, VDD = 0V to VPRH + 0.1V step, 90% of VOUT change 7
Specified Temperature Range TA -40 125 °C 7
Operating Temperature Range TA -40 125 °C (Note 1) 7
Storage Temperature Range TA -65 150 °C 7
Current at Input Pins -2 2 mA 3
Current at Output and Supply Pins -30 30 mA 3
Max. Junction Temperature TJ 150 °C 3
ESD protection, HBM 2 kV HBM 3
ESD protection, CDM 1.5 kV CDM 3
ESD protection, MM 300 V MM 3
Thermal Resistance, 8L-SOIC θJA 150 °C/W 7

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin Package: MNY = 2×3 TDFN, 8-lead * SN = Plastic SOIC (150mil Body), 8-lead 47

CAD (KiCad official)

  • Symbol: MCP6N11-005E
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: mcp6n11-005e-etched.step / mcp6n11-005e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mcp6n11-005e.step / mcp6n11-005e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (50 pp, sha256 b08e0d74003c4ec2, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF