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Contents

README

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MCP2562FD-E

Microchip Tech · CAN ICs · SOIC-8

MCP2562FD-E from Microchip Tech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 TXD input Transmit Data Input from the CAN controller; Low drives CANH/CANL Dominant, High drives Recessive, with internal pull-up (nominal 33 kΩ) to VIO in the MCP2562FD.
2 VSS power_in Ground supply pin.
3 VDD power_in Positive supply voltage pin supplying the transmitter and receiver, including the wake-up receiver; typical undervoltage threshold is 4V.
4 RXD output Receive Data Output, CMOS-compatible, High when the CAN bus is Recessive and Low when Dominant, supplied by VIO in the MCP2562FD.
5 VIO power_in Digital I/O supply pin (MCP2562FD only) for TXD, RXD and STBY, interfacing with 1.8V to 5.5V I/O, with a typical undervoltage threshold of 1.2V.
6 CANL bidirectional CAN Low-Level Voltage I/O driving the low side of the differential bus and tied to the receive comparator; disconnects from the bus when the device is not powered.
7 CANH bidirectional CAN High-Level Voltage I/O driving the high side of the differential bus and tied to the receive comparator; disconnects from the bus when the device is not powered.
8 STBY input Standby Mode Input selecting Normal mode (Low) or Standby mode (High), with internal MOS pull-up to VIO (typically 660 kΩ at 5V, 1.1 MΩ at 3.3V, 4.4 MΩ at 1.8V).

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package SOIC-8
Category Interface ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD supply voltage range VDD 4.5 5.5 V 9
VDD supply current, recessive IDD 5 10 mA Recessive; VTXD = VDD 9
VDD supply current, dominant IDD 45 70 mA Dominant; VTXD = 0V 9
VDD standby current IDDS 5 15 µA MCP2562FD; Includes IIO 9
POR comparator high level VPORH 3.8 4.3 V 9
POR comparator low level VPORL 3.4 4 V 9
POR comparator hysteresis VPORD 0.3 0.8 V 9
VIO digital supply voltage range VIO 1.8 5.5 V 9
VIO supply current, recessive IIO 4 30 µA Recessive; VTXD = VIO 9
VIO supply current, dominant IIO 85 500 µA Dominant; VTXD = 0V 9
VIO standby current IDDS 0.3 1 µA Note 1 (characterized; not 100% tested) 9
CANH/CANL recessive bus output voltage VO(R) 2 3 V VTXD = VDD; No load 9
CANH/CANL bus output voltage in standby VO(S) -0.1 0 0.1 V STBY = VTXD = VDD; No load 9
Recessive output current IO(R) -5 5 mA -24V < VCAN < +24V 9
CANH dominant output voltage VO(D) 2.75 3.5 4.5 V TXD = 0; RL = 50 to 65 9
CANL dominant output voltage VO(D) 0.5 1.5 2.25 V RL = 50 to 65 9
Symmetry of dominant output voltage VO(D)(M) -400 0 400 mV VTXD = VSS (Note 1) 9
Dominant differential output voltage VO(DIFF) 1.5 2 3 V VTXD = VSS; RL = 50 to 65 9
Recessive differential output voltage VO(DIFF) -120 0 12 mV VTXD = VDD 9
Recessive differential output voltage, no load VO(DIFF) -500 0 50 mV VTXD = VDD, no load 9
CANH short circuit output current IO(SC) -120 85 mA VTXD = VSS; VCANH = 0V; CANL: floating 10
CANH short circuit output current, VDD=5V, 25°C IO(SC) -100 mA VDD=5V, TAMB = 25°C (Note 1) 10
CANL short circuit output current IO(SC) 75 120 mA VTXD = VSS; VCANL = 18V; CANH: floating 10
CANL short circuit output current, VDD=5V, 25°C IO(SC) 100 mA VDD=5V, TAMB = 25°C (Note 1) 10
Recessive differential input voltage, normal mode VDIFF(R)(I) -1 0.5 V Normal Mode; -12V < V(CANH, CANL) < +12V (Note 3) 10
Recessive differential input voltage, standby mode VDIFF(R)(I) -1 0.4 V Standby Mode; -12V < V(CANH, CANL) < +12V (Note 3) 10
Dominant differential input voltage, normal mode VDIFF(D)(I) 0.9 V Normal Mode; -12V < V(CANH, CANL) < +12V (Note 3); max printed as VDD 10
Dominant differential input voltage, standby mode VDIFF(D)(I) 1 V Standby Mode; -12V < V(CANH, CANL) < +12V (Note 3); max printed as VDD 10
Differential receiver threshold, normal mode VTH(DIFF) 0.5 0.7 0.9 V Normal Mode; -12V < V(CANH, CANL) < +12V (Note 3) 10
Differential receiver threshold, standby mode VTH(DIFF) 0.4 1.15 V Standby Mode; -12V < V(CANH, CANL) < +12V (Note 3) 10
Differential input hysteresis VHYS(DIFF) 50 200 mV Normal mode (Note 1) 10
Common mode input resistance RIN 10 30 kΩ Note 1 10
Common mode resistance matching RIN(M) -1 0 1 % VCANH = VCANL, (Note 1) 10
Differential input resistance RIN(DIFF) 10 100 kΩ Note 1 10
Common mode input capacitance CIN(CM) 20 pF VTXD = VDD; (Note 1) 10
Differential input capacitance CIN(DIFF) 10 pF VTXD = VDD; (Note 1) 10
CANH, CANL input leakage ILI -5 5 µA VDD = VTXD = VSTBY = 0V; VIO = 0V; VCANH = VCANL = 5 V 10
Low-level input voltage VIL -0.3 V max printed as 0.3VIO 11
High-level input current IIH -1 1 µA 11
TXD low-level input current IIL(TXD) -270 -150 -30 µA 11
STBY low-level input current IIL(STBY) -30 -1 µA 11
RXD low-level output voltage VOL 0.4 V IOL = 4 mA; typical 8 mA 11
Thermal shutdown junction temperature TJ(SD) 165 175 185 °C -12V < V(CANH, CANL) < +12V, (Note 1) 11
Thermal shutdown hysteresis TJ(HYST) 20 30 °C -12V < V(CANH, CANL) < +12V, (Note 1) 11
Bit time tBIT 0.2 69.44 µs 13
Bit frequency fBIT 14.4 5000 kHz 13
Propagation delay TXD to RXD tTXD-RXD 90 120 ns 13
Propagation delay TXD to RXD, heavy load tTXD-RXD 120 180 ns RL = 120Ω, CL = 200 pF, (Note 1) 13
Recessive bit time on RXD, 2 Mbps tBIT(RXD),2M 450 485 550 ns tBIT(TXD) = 500 ns, see Figure 2-10 13
Recessive bit time on RXD, 2 Mbps, heavy load tBIT(RXD),2M 400 460 550 ns tBIT(TXD) = 500 ns, RL = 120Ω, CL = 200 pF, (Note 1) 13
Recessive bit time on RXD, 5 Mbps tBIT(RXD),5M 160 185 220 ns tBIT(TXD) = 200 ns, see Figure 2-10 13
Recessive bit time on RXD, 8 Mbps tBIT(RXD),8M 85 105 140 ns tBIT(TXD) = 120 ns, see Figure 2-10 (Note 1) 13
Delay bus dominant to RXD (standby mode) tFLTR(WAKE) 0.5 1 4 µs Standby mode 13
Delay standby to normal mode tWAKE 5 25 40 µs Negative edge on STBY 13
Supply voltage VDD VDD 7 V 8
Supply voltage VIO VIO 7 V 8
DC voltage at TXD, RXD, STBY and VSS -0.3 V -0.3V to VIO + 0.3V 8
DC voltage at CANH, CANL -58 58 V 8
Transient voltage on CANH, CANL -150 100 V ISO-7637, Figure 2-5 8
Storage temperature -55 150 °C 8
Operating ambient temperature (absolute maximum) -40 150 °C 8
Virtual junction temperature TVJ -40 190 °C IEC60747-1 8
Soldering temperature of leads 300 °C 10 seconds 8
ESD on CANH/CANL, MCP2562FD 8 kV IEC 61000-4-2 8
ESD on CANH/CANL, HBM 8 kV IEC 801; Human Body Model 8
ESD on all other pins, HBM 4 kV IEC 801; Human Body Model 8
ESD on all pins, Machine Model 300 V IEC 801; Machine Model 8
ESD on all pins, Charge Device Model 750 V IEC 801; Charge Device Model 8
Specified temperature range (E grade) TA -40 125 °C Extended (E) 16
Thermal resistance, 8L-SOIC θJA 149.5 °C/W 16

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin P = Plastic Dual In-Line - 300 mil Body, 8-lead SN = Plastic Small Outline - Narrow, 3.90 mm Body, 29

CAD (KiCad official)

  • Symbol: MCP2562FD-E
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: mcp2562fd-e-etched.step / mcp2562fd-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mcp2562fd-e.step / mcp2562fd-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (32 pp, sha256 79321323eb3295c5, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF